Samsung Electronics Co., Ltd.

Shin-etsu Chemical Co., Ltd.

S-printing Solution Co., Ltd.

Nec Corporation

Samsung Sdi Co., Inc.

Az Electronics Materials (luxembourg) S.a.r.l.

Hyun-woo Kim

Jin Su Park

Sang-gyun Woo

Jin-Kyu Han

Cha-Won Koh

Sang-jun Choi

Dong-won Jung

Sook Jin Lee

Tae-kyun Kim

Kwang-sub Yoon

Si-hyeung Lee

Won-Jun Hwang

Seok-cheol Kee

Hai-sub Na

Su-Min Kim

Ki-young Kwon

Myeong-koo Kim

Jun Hatakeyama

Han-Ku Cho

Yool Kang

Jong-ha Lee

Su-Min Park

Eun-sung Kim

Kyoung-seon Kim

Chil-Hee Chung

Jeon-Il Lee

Hyo-Jin Yun

So-Ra Han

Cheol-Hong Park

Sang-Yoon Woo

Min-Soo Kim

Yu-sin Yang

Sang-Gyun Woo

Chung-sam Jun

Sung-ho Lee

Youn-Joung Cho

Sang-kil Lee

Young-Hwan Kim

Jong-Soo Kim

Chang-kyu Choi

Toshio Kamei

Seong-woon Choi

Jin Kuk Hong

Georg Pawlowski

Woo-seok Ko

Sang-Min Park

Jung-hyeon Kim

Xiaowei Wang

Tetsuo Okayasu

Oleg Feygenson

Jeong-ju Park

Shi-yong Yi

Yusuke Hama

Jae-woo Nam

Hyung-rae Lee

Yu Jin Oh

Seung-chul Kwon

Young-jae Ryu

Hyung-Su Son

Jin-young Yoon

Kyoung-taek Kim

Myoung-Ho Jung

Nae-ry Yu

Song-se Yi

Cheol Hong Park

Hyun-ji Song

Yong-jae Kim

Weoun-ju Kim

Si-hyueng Lee

Won-ki Lee

Jae-yeol Baek

Min-Ju Park

Jeong-hoi Kim

Baek-man Sung

Chae-ho Shin

Cha-won Ko

Jae-youn Wi

Hyo-Sung Lee

Ju-hyung An

Hak-won Kim

A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

Photoresist polymers, methods of forming patterns and methods of manufacturing semiconductor devices

A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.

Filter structure for chemical solution used in manufacturing integrated circuit and apparatus for supplying chemical solution including filter structure for chemical solution

A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

Photoresist compositions, intermediate products, and methods of manufacturing patterned devices and semiconductor devices

Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.

Method of forming photoresist pattern and method of fabricating semiconductor device using the same

A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices

A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.

Method of forming semiconductor device using metal-containing hardmask to pattern photoresist having protected polymer

A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.

Method of forming patterns and method of manufacturing integrated circuit device using the same

Photoresist polymers and methods of forming patterns

An image forming apparatus includes a main body; a door configured to be connected to the main body by a hinge; a feeding part configured to include a feeding roller for feeding a paper and a pressure roller pressurized to the feeding roller by elastic force of an elastic member to form a nip together with the feeding roller; and a movable member configured to reduce the elastic force applied to the pressure roller so that the pressure roller is moved in a nip releasing direction according to an opening operation of the door.

Moveable member to move a pressure roller in a direction away from a feeding roller according to an opening operation of a door

A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

Composition for manufacturing semiconductor device and method of manufacturing semiconductor device using the composition

A cartridge for a recording medium and an image forming apparatus are provided. The image forming apparatus includes a housing, a printing unit disposed inside the housing, and having a thermal head with a heating element, and a cartridge for a recording medium, in which a recording medium wound in a roll shape is installed and which is provided to supply the recording medium to the printing unit, wherein the cartridge for a recording medium has a de-curl roller which guides the recording medium to be curved in a direction opposite to a winding direction, and is provided to be movable in a direction adjacent to the recording medium when the recording medium is supplied to the printing unit.

Cartridge for recording medium and image forming apparatus having the same

Methods of forming a hardmask material film are provided. The methods may include preparing a substrate including a first region that includes first patterns with a first density and a second region that includes second patterns with a second density that is lower than the first density or is free of patterns, forming a first hardmask material film in gaps between the first patterns and on surfaces of the first region and the second region, performing a heat treatment on the first hardmask material film such that solvent solubility of portions of the first hardmask material film in the gaps between the first patterns becomes different from solvent solubility of portions of the first hardmask material film outside the gaps, removing the first hardmask material film formed on the surfaces of the first region and the second region such that the portions of the first hardmask material film in the gaps at least partially remain in the gaps, and forming a second hardmask material film on the surfaces of the first region and the second region.

Methods of forming hardmask material film

Methods of forming patterns using photoresist polymers and methods of manufacturing semiconductor devices

In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Methods of manufacturing semiconductor devices

Growing community of inventors

Seongnam-si, South Korea

Hyun-woo Kim