Samsung Electronics Co., Ltd.

Korea University Research and Business Foundation

Hyun Woo Cho

Sechung Oh

Chulwoo Kim

Jaehoon Kim

Tae-Jin Kim

Yongsung Park

Young Hwan Chang

Seungwoo Park

Sanghwan Park

Jonghyuck Choi

Hyeonwoo Seo

Jae Suk Yu

Kil Hoon Lee

A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 Å to about 20 Å, and a thickness of the at least one spacer layer is from about 2 Å to about 15 Å.

Magnetic memory devices

A transmitter and a receiver are provided. The transmitter includes a processing unit configured to receive a clock signal and a data signal, set a value of a consecutive identical digit (CID) value related to the data signal and generate a modulation signal during a unit interval (UI) based on the data signal and the CID value, and a transmitter driver configured to output output signals having different voltage levels during the unit interval by receiving the modulation signal.

Data transmitting and receiving device

Growing community of inventors

Suwon-si, South Korea

Hyun Woo Cho