Electronics and Telecommunications Research Institute

Dongwon Systems Corporation

Hyun-Tak Kim

Sun-Jin Yun

Bong-Jun Kim

Yong-Wook Lee

Kwang-Yong Kang

Byung-Gyu Chae

Bongjun Kim

Jong Sung Park

JungWook Lim

Sung-Youl Choi

Sang-Kuk Choi

Gyung-Ock Kim

Sung-Lyul Maeng

Sungwoo Jo

Jung-Wook Lim

Jeong Yong Choi

Doo-Hyeb Youn

Gyungock Kim

Tae Moon Roh

Yoon Ho Song

Jun Sik Kim

Byung Gyu Chae

Sungyoul Choi

Dae-Yong Kim

Sun Ae Kim

Bit Na Kim

Yong-wook Lee

Jin Cheol Cho

Tetiana Slusar

Sun Shin Kwag

Jae Ho Choi

Jae-Yeob Shim

Hyun-Woo Jeon

Sun-Kyu Jung

Gi-wan Seo

Jin-cheol Cho

Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.

Monolithic metal-insulator transition device and method for manufacturing the same

The present invention relates to a current sensor which measures alternating electromagnetic wave and a current breaker using the same, and the current sensor for alternating current is characterized in that it includes a sensor part arranged at a separation distance from the power wire through which alternating current is flowing; and a means of detecting alternating current by measuring the electromagnetic wave generated across the above sensor part by the electromotive force induced by the alternating current flowing through the above power wire, and in that the above means of detecting alternating current includes an amplifier.

Current sensor for measuring alternating electromagnetic wave and a current breaker using the same

The present disclosure discloses an electrical switchgear configured to control an electro-magnet by using the electro-magnet, a critical temperature device, and an electro-magnet control unit without using a bimetal and a mechanical contact. The electro-magnet switches power applied through a power line in response to a flow of control current to a power device connected to a load side. In a critical temperature device, an output current value varies when a temperature of a heating wire, which is connected to the power line, exceeds a critical temperature by supply current flowing to the power device. An electro-magnet control unit, which is realizable with an SCR, allows a flow of control current of the electro-magnet to be generated or cut off in response to the output current value of the critical temperature device.

Electrical switchgear for overcurrent protection using critical temperature device

Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0&#xd7;10'cmand lower than 1.0&#xd7;10cm, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.

Electromagnetic sensor of oxygen-rich vanadium-oxide and system thereof

The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

Fire detecting device including metal-insulator transition (MIT) device molded by clear compound epoxy

Metal-insulator transition (MIT) device molded by clear compound epoxy

The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Method for removing electro-static discharge (EDS) noise signal in electronic system including the metal-insulator transition (MIT) 3-terminal device

Provided is a metal-insulator transition (MIT) transistor system including an MIT critical current supply device allowing MIT to occur between a control terminal and an outlet terminal of an MIT transistor for easily and conveniently driving the MIT transistor. A current supplier according to the present invention provides a critical current for allowing an MIT phenomenon to occur between the control terminal and the output terminal of the MIT transistor.

MIT transistor system including critical current supply device

Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.

Thermoelectric elements using metal-insulator transition material

Disclosed is a multipurpose alarm apparatus which includes a smoke sensing unit configured to sense a smoke using a first sensor and a second sensor, each of the first and second sensors including a temperature-sensitive smoke sensor portion disposed between a first electrode and a second electrode; a smoke level measuring unit configured to generate a smoke level measurement signal by comparing a difference between first and second smoke detection signals from the first and second sensors with a reference signal; and a sensing control unit configured to generate a fire alarm signal when the smoke level measurement signal corresponds to a fire generation condition.

Composite temperature and smoke alarm device and equipped smoke sensor therein

Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor.

Metal-semiconductor convergence electric circuit devices and electric circuit systems using the same

Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.

Circuit for preventing self-heating of metal-insulator-transition (MIT) device and method of fabricating integrated-device for the same circuit

The present inventive concept is a hyuntak transistor that can prevent a thermal runaway phenomenon and a low heat high efficiency constant current circuit using an auxiliary transistor capable of a high amplification and a constant current. The circuit may be applied to drive a LED and a motor.

Constant current circuit of high efficiency

Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Variable gate field-effect transistor and electrical and electronic apparatus including the same

Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

Growing community of inventors

Daejeon, South Korea

Hyun-Tak Kim