Applied Materials, Inc.

Hyun Sung Joo

David R Lopes

A method of selectively oxidizing a composite film. According to the present invention a substrate of having a composite film comprising of lower silicon film, a barrier layer, and upper metal film on the barrier layer is placed into a reaction chamber. An inert gas is then fed into reaction chamber to create an inert ambient in the reaction chamber. The temperature of the substrate is then raised or ramped from first temperature to a second temperature in the inert ambient. After the temperature of the substrate is raised to the second temperature the substrate is exposed to an ambient which oxidizes the silicon but which does not oxidize the metal.

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San Ramon, CA, United States of America

Hyun Sung Joo