Samsung Electronics Co., Ltd.

Hyun-suk Lee

Ji-woon Park

Ji-won Yu

Hee-Sook Park

Woong-hee Sohn

Gi-hee Cho

A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

Semiconductor device

A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.

Growing community of inventors

Hwaseong-si, South Korea

Hyun-suk Lee