Sungkyunkwan University

Global Frontier Center for Multiscale Energy Systems

Lg Electronics Inc.

Korea University Research and Business Foundation

Global Frontier Center for Multiscale Energy

Research & Business Foundation Sungyunkwan

Hyun Suk Jung

So Yeon Park

Won Bin Kim

Jae Myeong Lee

Byeong Jo Kim

Dong Geon Lee

Min Hee Kim

Sang Myeong Lee

Se Jin Kim

Jin Hyuk Choi

Dong Hoe Kim

SangMyeong Lee

Kyung Mun Yeom

Jun Hong Noh

Young Un Jin

Jun Young Kim

Jaesang Lee

Jaesung Kim

Kyuri Kim

In Young Hwang

Chanho Lee

Jaemin Choi

Kye Sook Jeong

Min Jeong Kim

Hyomin Kim

Yun Seok Kim

Mee Yeon Choi

Gi Ra Yi

Byoung Nam Lee

Eun Jeong Ryu

Jidong Kim

Bonghyun Jo

Han Gill Sang

Ohyeong Gong

Zhu Jun

Taekyu Ahn

ChangHwun Sohn

Saein Suh

Oh Yeong Gong

Gil Sang Han

Hee Jung Kim

Ji Hyun Baek

Hyun Suk Chung

Jung Seok Hong

Jae Bum Jeon

Yeon Kyeong Ju

Mi Yeon Baek

Gill Sang Han

Eun Sang Yoo

Yun Jin An

Dong Jun Lee

Miyeon Baek

Seung Lee Kwon

Gi Joo Bang

The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Metal oxide nanoparticle ink, method of preparing the same, metal oxide nanoparticle thin film manufactured using the same, and photoelectric device using the same

The present application relates to a method for manufacturing an inverse opal structure membrane filter, the method comprising the steps of: preparing a mixed solution by mixing a nanoparticle dispersion solution and a sacrificial particle dispersion solution; applying the mixed solution onto a substrate to dry it; and heat-treating the mixed solution, wherein the surface of the sacrificial particles is modified by positive charges or negative charges.

Preparing method of membrane filter including inverse opal structure

A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Resistance random access memory device and method for manufacturing same

A display device according to an embodiment may include a controller and a display unit. The controller may perform tone mapping for adjusting luminance of input image data, and the display unit may display an image according to output image data whose luminance is adjusted by the tone mapping. The controller may generate a base mapping curve for an entire region from the input image data, extract information for each local region of the entire region, and generate a local mapping curve reflecting the information for each local region with respect to each local region to perform tone mapping.

Display device performing tone mapping using local mapping curves

A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

Perovskite solar cell and method for manufacturing same

The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIBrthin film (where 0&#x2264;x&#x2264;3) and/or a CsAgBiBrIthin film (where 0&#x2264;x&#x2264;6) having an elpasolite structure.

Resistance random access memory device and fabricating method of the same

The present disclosure relates to a method of synthesizing composites for removing heavy metals, including: preparing hollow hydroxyapatite particles including a functional group; preparing a composite in which magnetic oxide nanoparticles are combined on the hollow hydroxyapatite; and preparing a composite of hollow hydroxyapatite and metal particles by performing reduction annealing to the composite.

Composites for removing heavy metal and method of synthesizing the same

The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Resistive random access memory device comprising metal halide and method for preparing the same

The present invention relates to a method which can effectively remove perovskite light absorbers, hole transport layers, metal electrodes, and the like by immersing a waste perovskite-based photoelectric conversion element module in a cleaning solution under predetermined conditions. The present invention can recover a substrate from the waste module and manufacture a photoelectric conversion element having a photoelectric conversion efficiency level comparable to the initially high level again, using the same.

Method for recycling perovskite-based photoelectric conversion element

The present disclosure provides a method for producing beta-tricalcium phosphate spherical particles containing magnetic ions. The method includes mixing acidic amino acid monomers, metal salt of magnetic ions and metal salt of calcium ions in de-ionized water to form a first solution; dissolve phosphate in de-ionized water to form a second solution; mixing the first and second solutions to form a third solution; and performing hydrothermal synthesis of the third solution.

Magnetic beta-tricalcium phosphate spherical particles and method for producing the same

The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Resistance random access memory device and preparing method thereof

Provided are a silver nanowire conductive film coated with an oxidation protection layer and a method for fabricating the same. A silver nanowire conductive film coated with an oxidation protection layer includes: a substrate; silver nanowires disposed on the substrate; and an oxidation protection layer coated on the silver nanowires, wherein the oxidation protection layer comprises an oxide.

Silver nanowire conductive film and method of fabricating the same

Provided are an yttrium aluminum garnet (YAG) phosphor, YAG phosphor particles, and methods of fabricating the same. The method of fabricating an yttrium aluminum garnet (YAG) phosphor involves: dispersing aluminum hydroxide core particles in an aqueous solution comprising yttrium, urea, and a lanthanide element to form a shell on the aluminum hydroxide core particles; and calcining the aluminum hydroxide core particles with the shell formed thereon to obtain hollow YAG particles, in which the shell includes a compound of yttrium and a lanthanide element.

Yttrium aluminum garnet phosphor and synthesis method thereof

A solar cell is disclosed. The solar cell includes a transparent conductive layer formed on a substrate, microstructures protruding vertically aslant from a surface of the transparent conductive layer, an electron transport layer configured to cover the microstructures and formed of an electron transport metal oxide, a light absorber adhered to inner pores and a surface of the electron transport layer, a hole transport layer configured to cover the surface of the electron transport layer and formed of a hole transport material, and an electrode formed on the hole transport layer. In the solar cell, the thickness of a light absorption layer can be maximized to obtain a high current density and high photoelectric conversion efficiency.

Solar cell and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Hyun Suk Jung