Samsung Electronics Co., Ltd.

Samsung Corning Precision Materials Co., Ltd.

Hyun Su Kim

Joon-Hong Park

Han Ho Yoon

Joong Ryeol Choi

Hyung Ryul Park

Pung Keun Song

Ju Ok Park

Sung Ryong Choi

So Young Lee

Eun-Ok Lee

Taek Jung Kim

Hyoung Seok Oh

Sun Yong Hwang

Tae Jin Jeong

Dae Woong Cho

Min Kyu Kwon

Hyo Jung Noh

Bon Kyung Koo

Ji Won Yu

Jong Won Hong

Provided are a semiconductor device and a method for operating the semiconductor device. A semiconductor device includes a low power condition module which determines whether a system operated by a battery satisfies enter and exit conditions of a low power mode; an address module which identifies a predetermined own address; a low power set module which sets a detailed operation mode of the low power mode in accordance with the address identified by the address module; a debounce module which executes a debounce operation before the system entering the low power mode; and a low power enter/exit module which executes entry and exit of the low power mode of the system.

Semiconductor device and method for operating semiconductor device

A deposition equipment is provided. The deposition equipment includes: a reaction chamber including an upper plate and a container body, the upper plate including a gas supplier for injecting a processing gas; a wafer chuck including an upper surface on which a wafer is loaded, in the reaction chamber, with the upper surface of the wafer chuck facing the upper plate; and a processing gas shielding section which prevents the processing gas from being adsorbed to the upper surface of the wafer chuck and is disposed between the upper plate and the wafer chuck in a state in which the wafer is removed from the wafer chuck. The processing gas shielding section includes a shutter which is plate-like, and the shutter includes a region including a gas discharge section for jetting a purging gas toward the wafer chuck.

Deposition equipment and method of fabricating semiconductor device using the same

A method of fabricating a semiconductor device includes forming a metal film including Cu on a substrate, forming a protective film on the metal film, forming a hard mask including TaO, where x is 2.0 to 2.5, on the protective film, forming a hard mask pattern by patterning the hard mask, and forming a metal wiring by patterning the metal film, using the hard mask pattern as an etching mask.

Method for fabricating semiconductor device

Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of SmOand YbO, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.

Indium tin oxide target, method for manufacturing the same, transparent conductive film of indium tin oxide, and method for manufacturing transparent conductive film of indium tin oxide

Growing community of inventors

Suwon-si, South Korea

Hyun Su Kim