Samsung Electronics Co., Ltd.

Hyun-Su Choi

Jae-Seung Choi

Dong-Wook Seo

Nak-woo Sung

Kyeong-rae Kim

Tae-Joong Song

Jong-Hoon Jung

Chan-Ho Lee

Gyu-Hong Kim

Soung-Hoon Sim

In-Gyu Park

Jung-Hak Song

Pan-jong Kim

Nak-Woo Sung

A volatile memory device includes a memory cell array configured to be supplied with a first power supply voltage through a first power supply line, and configured to store data based on the first power supply line; and a peripheral circuit configured to be supplied with a second power supply voltage through a second power supply line, and configured to control the memory cell array based on the second power supply line, the peripheral circuit including a self timing pulse circuit configured to determine an operation timing of the peripheral circuit, the self timing pulse circuit configured to be supplied with the first power supply voltage through the first power supply line, and the self timing pulse circuit being configured to adjust the operation timing of the peripheral circuit according to the voltage level of the first power supply voltage.

Volatile memory device and system-on-chip including the same

A negative voltage generator includes a variable-capacitance negative voltage generating unit, a switching unit and a positive voltage applying unit. The negative voltage generating unit includes a plurality of coupling capacitors for varying the capacitance in which the negative voltage is charged. The negative voltage generating unit selects at least one coupling capacitor of the plurality of coupling capacitors according to the number of rows (size) of a memory bank to which data is written, and charges the at least one selected coupling capacitor to a negative voltage. The switching unit selects one bitline of a bitline pair having complementary first and second bitlines in response to the data, and connects the at least one selected coupling capacitor to the selected bitline. The positive voltage applying unit applies a positive (high) voltage to an other bitline of the bitline pair.

Negative voltage generator and semiconductor memory device

A security circuit includes an electrical fuse read only memory (ROM) including a plurality of electrical fuse units. The electrical fuse units are arranged to correspond to bit values of an initial security key before the electrical fuse ROM is programmed.

Security circuit having an electrical fuse ROM

A driver may include a driving unit and/or a boosting unit. The driving unit may be configured to provide a driving signal to at least one load. The boosting unit may be configured to boost the driving signal based on transition time points of the driving signal to reduce a distortion of the driving signal. The transition time points may be time points during a transition of the driving signal from a first level to a second level.

Driver, and a semiconductor memory device having the same

A wake-up circuit of a memory device employs a cascade chain structure in which bit lines are divided into a plurality of blocks, and if the bit lines of one of the blocks are determined to have undergone a wake-up operation based on a bit line voltage fed back in the block, the wake-up operation is performed on a subsequent block. Accordingly, a wake-up delay can be varied, and therefore peak currents can be controlled, thereby reducing overall system power noise.

Cascade wake-up circuit preventing power noise in memory device

The device comprises km memory cell array blocks arranged in the form of a matrix, divided by x block selecting signals and y block selecting signals, and including a plurality of divided word lines arranged horizontally; a plurality of bit lines for each of the km memory cell array blocks arranged vertically; a plurality of main word lines for a plurality of bit lines for each of the km memory cell array blocks arranged horizontally; km of xy address word lines above or below the km memory cell array blocks; a decoder for decoding a corresponding x block selecting signal among x block selecting signals generated by decoding the x block selecting address and y block selecting signals generated by decoding the y block address to select corresponding m of xy address word lines and for being arranged for each of m memory cell array blocks arranged horizontally among the km memory cell array blocks; km of divided y address lines arranged vertically from the km of xy address word lines to the km memory cell array blocks; and word line driver for combining the plurality of the main word lines of each of the km memory cell array blocks and a signal of a corresponding xy address word line among the km of xy address word lines to select the plurality of the divided word lines.

Growing community of inventors

Suwon-si, South Korea

Hyun-Su Choi