Samsung Mobile Display Co., Ltd.

Coway Co., Ltd

Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Woongjin Coway Co., Ltd

Skhynix Inc.

Yonsei University

Industry-academic Cooperation Foundation

Kotrass Co., Ltd.

Hyun-Soo Shin

Yeon-gon Mo

Jae-Kyeong Jeong

Jong-Han Jeong

Jae-Bon Koo

Chul-Ho Kim

Jin-Seong Park

Hyoung-Min Moon

Hun-Jung Lee

Jong-Hwan Lee

Min-Kyu Kim

Jung-Hwan Lee

Tae-Kyung Ahn

Young-Hoon Hong

Woo-Jin Joo

Si-Jun Park

Min-Chul Suh

Sang-Yoon Lee

Myung-Kwan Ryu

Kyung-bae Park

Hyun-Jae Kim

Hui-Won Yang

Hun Joo Lee

Jong-Baek Seon

Byung-Du Ahn

Byoung-Phil Lee

Woong-Hee Jeong

Tae-Seong Kwon

Gun-Hee Kim

In-Du Choi

Hyun-Seok Moon

Byung-Sun Mo

Jung-Hun Lee

Dong-Un Jin

Jin-Sung Park

Yeon-Gon Mo

Woong Jung

Chan-Jung Park

Sang-Hyeon Kang

Hee-Jung Lee

Chang-Man Son

Hyung-Jun Kim

Steve Y G Mo

Hyeon-Kyu Lee

Gyeong-Min Lee

Sung-Kon Cho

Yeong-Gon Mo

Ki-Bum Kim

Woon-Seop Choi

Chung-Lae Kim

Min-Chul Yong

Gyeong-Jong Kim

Kyung-Heon Lee

Byung-Hyo Ye

Se-Yeoul Kwon

Nam-Seok Lee

Sun-Hyeok Park

Byoung-Hoon Lim

Seong-Joon Lim

Jae-Eun Jeon

Sung-Hyun Hwang

Jae-Bon c/o Samsung Sdi Co Ltd Koo

A direct water purifier includes a first filter for filtering water introduced through a first flow path; a second filter for receiving the water supplied from the first filter through a second flow path and filtering the same; a first valve disposed in the second flow path to control water flow; a pump disposed in the second flow path to supply water having a predetermined hydraulic pressure or higher to the second filter; a third filter for receiving the water supplied from the second filter through a third flow path and filtering the same; a heating part for receiving the water supplied from the third filter and heating the same to a predetermined temperature; and a flushing valve disposed in a flushing flow path through which concentrated water is discharged from the second filter, wherein the flushing valve is opened during operation of the heating part.

Direct water purifier

A water purifier capable of stably discharging residual water from an extraction unit is disclosed. The water purifier () comprises: a filter unit () having a reverse osmosis membrane filter () for filtering incoming water; an extraction unit () for providing purified water filtered by the filter unit () to a user; and a residual water drainage unit () configured to drain, through the reverse osmosis membrane filter (), residual water remaining in the extraction unit (), by using an osmotic phenomenon of the reverse osmosis membrane filter () after completion of the extraction through the extraction unit ().

Water purifier

Disclosed is a hot water discharging apparatus. A hot water discharging apparatus according to an embodiment of the present invention comprises: a water heater for heating water that has flowed into hot water, and discharging the hot water; and a hot water discharge unit that is connected to the water heater so that the hot water discharged from the water heater is discharged to the outside, wherein the water heater is provided with an outlet through which the hot water is discharged, the hot water discharge unit includes a hot water discharge member connected to the outside so that the hot water is discharged to the outside, and the water heater may be disposed so that the outlet is located higher than the hot water discharge-side end of the hot water discharge member.

Hot water discharging apparatus

Disclosed is a condenser for a water purifier, comprising a pipe provided with a plurality of bending parts which are disposed so as to be vertically overlapping with one another, cooling wires provided on the upper and lower surfaces of the plurality of bending parts; and fixing members for fixing the cooling wires. The cooling wires that are provided on the surfaces, facing each other, of the plurality of bending parts are disposed so as to alternate with each other.

Condenser for water purifier, method for manufacturing condenser for water purifier, and water purifier having condenser

Disclosed is a water treatment apparatus which can extract clean water by means of the pressure of raw water. The disclosed water treatment apparatus comprises: a filter part which filters raw water; a storage part which stores clean water filtered by passing through at least a part of the filter part, the storage part having a first chamber and a second chamber of which the volume changes according to a change in the volume of the first chamber; an extraction part which is installed so as to provide the filtered clean water to a user; and an air supply part which is installed on a flow path connected to the storage part in order to supply air to either one of the first chamber or the second chamber of the storage part.

Water treatment apparatus

A water treatment apparatus is provided. The water treatment apparatus includes a filtering unit including a water filter filtering raw water, a sterilizing water generator producing sterilizing water from purified water filtered by at least a portion of the filtering unit, and a discharge member through which the purified water, filtered by the filtering unit, is discharged externally. The sterilizing water produced in the sterilizing water generator sterilizes the discharge member and at least a portion of a flow path connected to the discharge member.

A semiconductor memory device includes a plurality of bit lines disposed over memory cells along a second direction intersecting with a first direction, and extending in the first direction; and a plurality of first wirings and a plurality of second wirings alternately disposed along the second direction over the bit lines, and extending in the first direction while being bent into zigzag shapes.

Semiconductor memory device

Disclosed are a water storage tank bladder, a manufacturing method therefor, the water storage tank including the bladder, and a water treatment apparatus including the water storage tank. According to one embodiment of the present invention, the water storage tank bladder used in the water storage tank to receive and store water and discharge the stored water has a lower side of which the thickness can be thicker than the thickness of the upper side of the bladder and thicker than the thickness of the lateral sides of the bladder.

Water storage tank bladder, manufacturing method therefor, water storage tank including bladder, and water treatment apparatus including water storage tank

A water discharge device is disclosed. A water discharge device according to an embodiment of the present invention may comprise: a main body having a flow channel formed therein such that water flows through the same and having a discharge opening connected to the flow channel and to the outside such that the water, which has flowed through the flow channel, is discharged to the outside; an opening/closing portion comprising an opening/closing member movably provided in the flow channel so as to open/close an opening/closing hole formed in the flow channel; and a manipulation portion that comprises a rotatable member, which rotates, and interworks with the main body and the opening/closing portion such that the opening/closing member is moved in the flow channel by a rotation of the rotatable member.

Water discharge device

A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cmto have stable electrical property.

Method of manufacturing thin film transistor and method of manufacturing organic light emitting display having thin film transistor

A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

Method of manufacturing thin film transistor

A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.

Thin film transistor having semiconductor active layer

A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

Transparent thin film transistor, and method of manufacturing the same

A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Solution composition for forming oxide thin film and electronic device including the oxide thin film

Growing community of inventors

Suwon-si, South Korea

Hyun-Soo Shin