Other

Micron Technology Incorporated

Intel Corporation

Hyun Sik Kim

Gurtej S Sandhu

John A Smythe

Tinku Acharya

Hoon Y Kim

Irina V Vasilyeva

Ping-Sing Tsai

James Mathew

Kyle B Campbell

Zhiqiang Xie

Sony Varghese

Yunjun Ho

Kyuchul Chong

Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.

Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material

The present invention relates to accessory systems for enhancing the security of restraint system used in a vehicle with a lap seatbelt system. A plurality of straps can placed on the upper surface of a vehicle seat and configured to provide a secure connection between the shoulders of the restraint system and an upper portion of the vehicle seat, the anchoring system securing the torso of the individual to the seat back. An optional plurality of straps are configured to provide a supplemental connection between the anchoring system and a rear portion of the seat, tethering the anchoring system to the vehicle to anchoring structures in the floor of the vehicle or the bottom portion of the seat. The straps can be adjusted to accommodate different heights in wearers, seats backs, and vehicle seats, making the restraint user adjustable for use by different wearers and in different vehicles.

Anchor assembly for safety vest in vehicles

Semiconductor constructions having fluorocarbon material

A disclosed example to modulate slit stress in a semiconductor substrate includes a first controller to, after obtaining a wafer stress measurement of the semiconductor substrate, control a first process to apply a first material to the semiconductor substrate based on the wafer stress measurement, the semiconductor substrate including a slit between adjacent stacked transistor layers, the first material coating walls of the slit to reduce a first width of the slit between the adjacent stacked transistor layers to a second width; and a second controller to control a second process to apply a second material to the semiconductor substrate, the second material to be deposited in the second width of the slit, the first material and the second material to form a solid structure in the slit between the adjacent stacked transistor layers.

Slit stress modulation in semiconductor substrates

A disclosed example to modulate slit stress in a semiconductor substrate includes controlling a first process to apply a first material to a semiconductor substrate. The semiconductor substrate includes a slit between adjacent stacked transistor layers. The first material coats walls of the slit to reduce a first width of the slit between the adjacent stacked transistor layers to a second width. A second process is controlled to apply a second material to the semiconductor substrate. The second material is to be deposited in the second width of the slit. The first material and the second material are to form a solid structure in the slit between the adjacent stacked transistor layers.

Some embodiments include methods of forming structures. Spaced-apart features are formed which contain temperature-sensitive material. Liners are formed along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300&#xb0; C. The liners extend along the temperature-sensitive material and narrow gaps between the spaced-apart features. The narrowed gaps are filled with flowable material which is cured under conditions that do not expose the temperature-sensitive material to a temperature exceeding 300&#xb0; C. In some embodiments, the features contain memory cell regions over select device regions. The memory cell regions include first chalcogenide and the select device regions include second chalcogenide. The liners extend along and directly against the first and second chalcogenides.

Methods of forming structures

Deformable guides for use with smaller persons and/or in a child restraint system are provided. The guides are of at least two varieties, one for inclusion within a belt system, so as to absorb the impact and stresses of a collision or other abrupt vehicular motion and the other of a type useful to guide the restraint system of an automobile about the correct location on a smaller person. The second type permits a smaller individual to be properly secured to a restraint system in spite of his small stature. The guides are made of multiple layers of metal, plastic or other structurally significant materials, or combinations thereof, and designed to receive the energy of a collision such that a guide will deform, without breaking, absorbing the energy of a collision or other abrupt action.

Deformable restraint guide for use with child restraint system

A supplemental restraint system that is easy to use in a vehicle is provided. The user of the system is prevented from the damaging effects of being restrained by a shoulder seat belt combination that provides inadequate support to most of the body and can produce injury at the point of contact with the body during an accident. Further, the supplemental restraint system of the present invention provides the user with a harness to better hold the user to the seat and restraint system of the vehicle. The present invention provides a means of dressing an adult or a child in a restraint harness that may be easily attached within a vehicle and provides the user with restraints that fit the user's height and weight requirements.

Growing community of inventors

Boise, ID, United States of America

Hyun Sik Kim