Samsung Electronics Co., Ltd.

Hyun-Seung Jei

Heewon Lee

Yeong-Jae Woo

Sungyong Seo

Suejin Kim

Otae Bae

A read reclaim method of a storage device includes detecting, at a cycle of a random number of read operations, the number of error bits within non-selection data stored in each of a plurality of memory blocks. A memory block having the number of detected error bits, with respect to the number of read operations, increasing at a rate greater than a reference rate over one or more cycles of the random number of read operations is selected as a weak block. The number of error bits within non-selection data stored in the weak block is detected at a cycle of a fixed number of read operations. A detection is made of whether the number of error bits detected according to the fixed-number cycle is greater than or equal to a read reclaim reference. The non-selection data is data not requested by a host.

Storage device and read reclaim method thereof

A method of operating a memory system including a nonvolatile memory, having a meta data region and a user data region, and a memory controller having a meta data manager. The method includes programming data to a memory block of the user data region and, by operation of the meta data manager, generating a meta log based on the programming. The meta log is stored to the memory controller. Upon a power-off operation, selectively storing the meta log to the meta data region of the nonvolatile memory based on status information of the nonvolatile memory.

Growing community of inventors

Osan-si, South Korea

Hyun-Seung Jei