Samsung Electronics Co., Ltd.

Hyun Seok Ryu

Suk Ho Yoon

Jung Hyun Lee

Bum Joon Kim

Ki Sung Kim

Jong Sun Maeng

Sung Tae Kim

Jong Hyun Lee

Peng Xue

Young Sun Kim

Min Hee Jang

Se Ho Myung

Ki Ho Park

Hong Sil Jeong

Boung Kyun Kim

Kyung Joong Kim

Seok Ki Ahn

The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transfer rate beyond a 4th generation (4G) communication system, such as long term evolution (LTE). The present disclosure provides a method and an apparatus for efficiently performing encoding and decoding of an information bit in a wireless communication system. The present disclosure relates to an operation method of a transmitting terminal in a wireless communication system, the method comprising the steps of: generating padding bits on the basis of information bits; generating an input bit sequence including the padding bits and the information bits; generating a message by encoding the input bit sequence by using a polar code; and transmitting the message.

Method and apparatus for performing encoding and decoding in wireless communication system

A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Chemical vapor deposition apparatus

There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Method of manufacturing semiconductor light emitting device

Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

CVD apparatus and method of forming semiconductor superlattice structure using the same

Growing community of inventors

Suwon, South Korea

Hyun Seok Ryu