Samsung Electronics Co., Ltd.

Hyun Namkoong

Jung-Hwan Kim

Yong-Seok Kim

Tae-Hyun Kim

Hun-Hyeoung Leam

Seok-Woo Nam

Tea-Kwang Yu

Dong-Kyum Kim

Jung Geun Jee

Han-Vit Yang

Ji-Man Yoo

Sang-Hoon Lee

Ki-Hyun Hwang

Jin-Gyun Kim

Hun-hyeong Lim

A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.

Semiconductor devices and methods of manufacturing the same

A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

Semiconductor device and method of fabricating the same

Semiconductor devices

A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.

Non-volatile memory device having a vertical structure and method of fabricating the same

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