Skhynix Inc.

Hyun Min Lee

Han Woo Cho

Hyun Jin Lee

Young Seok Ko

Jung Hun Lee

Jung Taik Cheong

An electronic device may include a semiconductor memory. The semiconductor memory may include: row lines; column lines intersecting the row lines; memory cells located in intersection regions of the row lines and the column lines, the memory cells including upper and lower electrodes; and interface layers located between the lower electrodes of the memory cells and the row lines, the interface layers having a width narrower than that of the row lines.

Electronic device and method for fabricating electronic device

A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second insulating layer is formed over the first insulating layer and the second insulating layer includes a second hole. A lower electrode is formed along a surface of the second insulating layer that defines the second hole. A spacer is formed on the lower electrode and exposes a portion of the surface of the lower electrode. A variable resistance material layer is formed in the second hole, and an upper electrode is formed on the variable resistance material layer.

Variable resistance memory device

Variable resistance memory device and method of manufacturing the same

A phase-change random access memory device and a method of manufacturing the same are provided. The method includes providing a semiconductor substrate including a heating electrode, forming an interlayer insulating layer including a preliminary phase-change region on the semiconductor substrate, reducing a diameter of an inlet portion of the preliminary phase-change region to be smaller than that of a bottom portion of the preliminary phase-change region, filling an insulating layer having a void in the preliminary phase-change region using a difference between the diameter of the inlet portion and the diameter of the bottom portion, removing the insulating layer to an interface between the inlet portion and the bottom portion, thereby forming a key hole exposing the heating electrode, and forming a phase-change material layer to be buried in the key hole and the preliminary phase-change region.

Growing community of inventors

Gyeonggi-do, South Korea

Hyun Min Lee