Samsung Electro-mechanics Co., Ltd.

Hyun Min Hwang

Tae Yoon Kim

Tae Kyung Lee

Moon Chul Lee

Hwa Sun Lee

Tah Joon Park

Chang Hyun Lim

Tae Hun Lee

Jae Chang Lee

Sung Sun Kim

Jeong Hoon Ryou

Jae Goon Aum

Dong Hoe Kim

A bulk acoustic resonator filter includes a series part including at least one series acoustic resonator electrically connected between a first and second radio frequency ports; and shunt acoustic resonators electrically connected to each other in series between a first node of the series part and a first ground port, wherein each of the shunt acoustic resonators comprises a resonance portion including a first electrode, a piezoelectric layer, and a second electrode; and an overlap region in which the first electrode, the piezoelectric layer, and the second electrode overlap, the overlap region has an aspect ratio equal to a ratio between a longest length of the overlap region in an extension direction of a longest side of the overlap region and a longest length of the overlap region in a direction perpendicular to the extension direction, and the aspect ratios of the shunt acoustic resonators include different aspect ratios.

Bulk acoustic resonator filter and bulk acoustic resonator package

A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.

BAW resonator and BAW filter for reducing harmonic distortion

A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.

Bulk acoustic resonator

Growing community of inventors

Suwon-si, South Korea

Hyun Min Hwang