Hyundai Motor Company

Kia Motors Corporation

Samsung Electronics Co., Ltd.

Hyun Kyu Park

Baek Hee Lee

Min Hyuk Kwak

Yo Seob Lee

Jong Hun Lee

Byung-Hong Chung

Gyu Ho Chung

Jeong-lim Nam

Sang-Gyun Woo

Cha-Won Koh

Yool Kang

Jai-Hyuk Song

Seok-hwan Oh

Kihyun Hwang

Jae-young Ahn

Young-Hoo Kim

Jong Soo Lee

Kwangmin Park

Dongchul Yoo

Juyul Lee

Won-Jin Kim

Ji-Young Min

Jongsik Chun

Bumsu Kim

Young-Ho Koh

A device configured for a vehicle for supporting and massaging a neck of a passenger is provided. The device is configured such that a neck support pad is integrally formed on a lower end portion of a headrest to hold up and support the neck of a passenger, and a massage device is mounted in the neck support pad to massage the neck of the passenger, thus stably supporting and massaging the neck of the passenger sitting on a seat.

Device for vehicle for supporting and massaging passenger's neck

A system for adjusting properties of a seat for a vehicle, may include thermoelement modules configured to have a structure in which a plurality of flexible thermoelements is connected by conductive wires to each other, and mounted in a seat foam pad of the seat; a property adjustment region input unit configured to select a property adjustment region of the seat foam pad; a property adjustment amount input unit configured to input a target property adjustment amount of the seat foam pad; and a controller connected to the thermoelement modules, the property adjustment region input unit and the property adjustment amount input unit, and configured to control an amount of current supplied to some or all of the flexible thermoelements according to output signals from the property adjustment region input unit and the property adjustment amount input unit.

System and method for adjusting properties of seat for vehicles

A defibrillation system may include a cardiac arrest detector detecting whether cardiac arrest of a passenger has occurred in a state of taking a seat of a self-driving vehicle and fastening a seatbelt of the vehicle; a passenger posture detection device detecting a posture of the passenger; a seat driving device changing the posture of the passenger into another posture in which the passenger lies down based on a detection signal of the passenger posture detection device when the cardiac arrest of the passenger occurs; a heart position detector configured to search for a position of a heart of the passenger; a defibrillation robot to perform a CPR method or a method using an AED on the heart of the passenger; and a controller controlling operation of the seat driving device, the heart position detector, and the defibrillation robot based on detection signals of the cardiac arrest detector and the passenger posture detection device.

Defibrillation system for self-driving vehicles

A hologram switch system of a seat for vehicles generates hologram switch images for adjusting movement of the seat and air-conditioning of the seat in front of a passenger sitting on the seat, and allows the passenger to perform selection and operation in the generated hologram switch images through the position and motion of a passenger's hand, so that the passenger may more intuitively approach and easily operate the switch images and thereby easily operate various seat moving apparatuses and seat air-conditioning apparatuses.

Hologram switch system of seat for vehicles

A ventilation and massage device for a seat, may include a seat foam pad including a plurality of air discharge holes formed in the seat foam; an air distribution duct mounted in a space in a rear surface of the seat foam pad and fluidically-connected to the plurality of air discharge holes, the air distribution duct being configured to distribute air to the air discharge holes; massage units mounted on a bottom surface of the air distribution duct, the massage units being configured to move forwards and backwards to open or close the air discharge holes or penetrate the air discharge holes; and a controller electrically connected to the massage units and configured to control an amount of movement of the massage units based on information related to a body pressure of an occupant accommodated in the seat and information related to a temperature and humidity at a contact portion between the occupant and the seat.

Ventilation and massage device for vehicle seat

A humidity-responsive seat control device for a vehicle employs a self-transforming film including a kind of biomaterial configured to operate to be opened through gradual shrinkage thereof when humidity of a seat cover or humidity inside of the seat cover increases while operating to be closed through gradual expansion thereof when the humidity of the seat cover or the humidity inside of the seat cover decreases, thereby being capable of not only achieving smooth air ventilation in an area where a body portion of a seat occupant contacts the seat cover, but also automatically adjusting an amount of air discharged outwards through the self-transforming film in accordance with humidity.

Humidity-responsive seat control device for vehicle

A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.

Three-dimensional semiconductor memory devices and methods of fabricating the same

In a method of manufacturing a semiconductor device, a first substrate and a second substrate, which include a plurality of memory cells and selection transistors, respectively, are provided. A first insulating interlayer and a second insulating interlayer are formed on the first substrate and the second substrate, respectively, to cover the memory cells and the selection transistors. A lower surface of the second substrate is partially removed to reduce a thickness of the second substrate. The lower surface of the second substrate is attached to the first insulating interlayer. Plugs are formed through the second insulating interlayer, the second substrate and the first insulating interlayer to electrically connect the selection transistors in the first substrate and the second substrate to the plugs. Thus, impurity ions in the first substrate will not diffuse during a thermal treatment process.

Method of manufacturing a semiconductor device

A wiring structure of a semiconductor device may include an insulation interlayer on a substrate, the insulation interlayer having a linear first trench having a first width and a linear second trench having a second width, the linear second trench being in communication with a lower portion of the linear first trench, the first width being wider than the second width, and a conductive layer pattern in the linear first and second trenches.

Wiring structure of a semiconductor device, method of forming the wiring structure, non-volatile memory device including the wiring structure, and method of manufacturing the non-volatile memory device

Example embodiments provide a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.

Nonvolatile memory device and method of manufacturing the same

Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.

Growing community of inventors

Hwaseong-si, South Korea

Hyun Kyu Park