Kookmin University

Hyun Kyu Lee

Dae Hwan Kim

Sung Jin Choi

Dong Myoung Kim

Shin Young Park

Jun Tae Jang

Dong Yeon Kang

Wonjung Kim

Disclosed is a synaptic transistor, including a substrate, an expansion gate electrode disposed to extend in one direction on the substrate, a gate insulating layer including ions, covering the expansion gate electrode, and disposed on the substrate, a channel layer disposed on the gate insulating layer to correspond to one end of the expansion gate electrode, source and drain electrodes spaced apart from each other, covering both ends of the channel layer, and disposed on the gate insulating layer, and a pad electrode disposed on the gate insulating layer to correspond to the other end of the expansion gate electrode.

Synaptic transistor with long-term and short-term memory

Growing community of inventors

Suwon-si, South Korea

Hyun Kyu Lee