Samsung Electronics Co., Ltd.

Hyun Kwon Hong

Wan Tae Lim

Jong In Yang

Seung Hwan Lee

Kwang Min Song

Se Jun Han

Yong Il Kim

Sang Seok Lee

Joon Woo Jeon

Tae Hyung Kim

Jin Hyun Lee

Ju Heon Yoon

Sang Yeon Kim

Su Min Hwangbo

A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.

Semiconductor light emitting device

A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.

A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Semiconductor light emitting device and light emitting apparatus

A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure

A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Growing community of inventors

Cheonan-si, South Korea

Hyun Kwon Hong