Samsung Electronics Co., Ltd.

Hyun Kook Park

Chi Weon Yoon

Yong Jun Lee

Chea Ouk Lim

Young Hoon Oh

Jung Sunwoo

Il Han Park

Hye Jin Yim

Sung Won Yun

A resistive memory element or device includes: a first, main, memory cell area including a plurality of first resistive memory cells; and a second, buffer, memory cell area including a plurality of second resistive memory cells. The first resistive memory cells of the main memory cell area are configured to store data therein, and the second resistive memory cells of the buffer memory cell area are configured to temporarily store portions of the data therein for at least a stabilization time period while the portions of the data stabilize in the main memory cell area.

Memory device comprising resistance change material and method for driving the same

An operating method of a memory device is provided. Using a statistical model, a resistance Rof a variable resistor of a memory cell and a variation &#x394;Rof the resistance Rare determined. Based on the resistance Rand the variation &#x394;Rof the resistance R, an average resistance Rand a beta value of the variable resistor are determined. Then, using the average resistance Rand the beta value, a resistance Rof an insertion resistor, connected between the memory cell and a power supply generator for generating a power supply voltage V, is determined.

Operating method of memory device

A memory device having a resistance change material and an operating method of the memory device are provided. A memory device includes a memory cell array including first and second resistive memory cells, which store different data according to the change of their resistance; a buffer including first and second storage regions corresponding to the first and second resistive memory cells, respectively; and a control circuit receiving program data to be programmed to the memory cell array, comparing first data stored in the first storage region and second data stored in the first resistive memory cell, and as a result of the comparison determining one of the first and second storage regions as a storage region to which to write the program data.

Memory device having resistance change material and operating method for the memory device

A method for programming a non-volatile memory device includes programming a lower bit in a memory cell included in the non-volatile memory device, reading the lower bit programmed in the memory cell before programming an upper bit in the memory cell, determining a threshold voltage of the memory cell according to a result of reading the lower bit, determining a type of the memory cell using the threshold voltage, and supplying one of a plurality of pulses to a bit line connected to the memory cell according to the determined type of the memory cell.

Growing community of inventors

Anyang-si, South Korea

Hyun Kook Park