Samsung Electronics Co., Ltd.

Seoul Pharma Co., Ltd.

Hyun Jun Jeong

Hyeon Jin Shin

Jin Heong Yim

Jong Kug Seon

Kwang Hee Lee

Jae Jun Lee

Sang Kook Mah

Jung Yoon Kim

Hyun Soo Kim

Ki Yong Song

Yi Yeol Lyu

Dong Ryul Shin

Hee Jun Lee

Kyu Jeong Yeon

Jin Gyu Park

Byung Chan Jang

Joon Sung Ryu

Jin Hee Um

Jin Hoo Lee

Moon Soo Son

Kyung Tae Jung

Ik Hyeon Chang

Dal Geun Kim

Disclosed is an electronic device that includes a housing including a first plate, a second plate, and a side member, a ground layer, a display, a communication circuit, and a processor. The side member includes a first conductive part, a second conductive part, and a non-conductive part in contact with the first conductive part and the second conductive part and interposed between the first conductive part and the second conductive part. The first conductive part may be electrically coupled with the second conductive part. The ground layer may be electrically coupled with a partial section of the first conductive part that is adjacent to the second conductive part. The communication circuit may be electrically connected with the first conductive part and the second conductive part.

Electronic device including antenna

Provided is a fast dissolving film composition comprising a medically active component as an active ingredient, in which the bitter taste of the active ingredient is masked and the fast dissolving film composition has a high content of 50% or higher. More particularly, provided is a pharmaceutical composition which comprises sildenafil or pharmaceutically acceptable salts thereof as an active ingredient, and which comprises a combination of a specific bitter taste masking agent to achieve masking of a bitter taste. Further, provided is a fast dissolving film composition which comprises a combination of a specific plasticizer to mask a bitter taste, and in which the physical properties of the high-content film are excellent.

High-content fast dissolving film with masking of bitter taste comprising sildenafil as active ingredient

A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiOenhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound

A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiOcontent, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.

Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer

Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer

A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.

Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer

Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a pore-forming agent (porogen) to prepare a composition for forming a dielectric film, and the composition is coated on a substrate to form an interlayer dielectric film for a semiconductor device. The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.

Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane

A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

Siloxane-based resin and interlayer insulating film formed using the same

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Gyeonggi-do, South Korea

Hyun Jun Jeong