Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Hyun-Ju Sung

Se-Myeong Jang

Makoto Yoshida

Hui-Jung Kim

Jae-Rok Kahng

Jae-Man Yoon

Sang-Yoon Kim

Ick-Chan Kwon

Kui-Won Choi

Dae-Yoon Chi

Kwang-Meyung Kim

Woun-Suck Yang

Chang-Hoon Jeon

Hee-Seup Kil

Ju-Hee Ryu

Beom-Suk Lee

Chul Ho Lee

Keun-Nam Kim

Kyoung-Ho Jung

The present invention relates to an anticancer prodrug consisting of peptide of acetyl-SEQ ID NO: 1-linker-anticancer drug. The anticancer prodrug effectively provides an anticancer drug unstable in acid or base, such as doxorubicin, in a form of prodrug. Thus, the anticancer prodrug exists as a non-toxic inactive form when administered into the body, but effectively releases the anticancer drug as an active ingredient in the target area in the presence of caspase activated by radiation or UV treatment after administered into the body. Accordingly, the anticancer drug exhibits selective anticancer effects on cancer cells, thereby maximizing the therapeutic effect and minimizing the side-effects of chemotherapy.

Anticancer prodrug activated by radiation or ultraviolet treatment and use thereof

The present invention relates to an anticancer prodrug consisting of peptide of acetyl-SEQ ID NO: 1-linker-anticancer drug. The anticancer prodrug effectively provides an anticancer drug unstable in acid and base, such as doxorubicin, in a form of prodrug. Thus, the anticancer prodrug exists as a non-toxic inactive form when administered into the body, but effectively releases the anticancer drug as an active ingredient in the target area in the presence of caspase activated by radiation or UV treatment after administered into the body. Accordingly, the anticancer drug exhibits selective anticancer effects on cancer cells, thereby maximizing the therapeutic effect and minimizing the side-effects of chemotherapy.

Anticancer prodrugs activated by radiation or ultraviolet treatment and use thereof

In methods of fabricating a semiconductor device having multiple channel transistors and semiconductor devices fabricated thereby, the semiconductor device includes an isolation region disposed within a semiconductor substrate and defining a first region. A plurality of semiconductor pillars self-aligned with the first region and spaced apart from each other are disposed within the first region, and each of the semiconductor pillars has at least one recessed region therein. At least one gate structure may be disposed across the recessed regions, which crosses the semiconductor pillars and extends onto the isolation region.

Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby

In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a protrusion extending from a substrate and a selective epitaxial growth (SEG) layer surrounding an upper portion of the protrusion, the SEG layer exposing sidewalls of a channel region of the protrusion.

Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer

For fabricating multiple field effect transistors (FETs), a first conductive layer is deposited over first and second active regions of a semiconductor substrate. The first conductive layer is patterned over the second active region to form mold structures. Mask structures are formed between the mold structures. The second active region is patterned using the mask structures or using spacers formed at sidewalls of the mold structures to form multiple fins of a field effect transistor of a fin type. The first conductive layer is patterned over the first active region to form a gate of another field effect transistor of a different type.

Method for fabricating multiple FETs of different types

Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same

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Seoul, South Korea

Hyun-Ju Sung