University of Florida Research Foundation, Incorporated

Hyun Jong Park

Olga Kryliouk

Timothy J Anderson

A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 &#x3bc;m. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured InGaN (1&#x2267;x&#x2267;0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.

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Gainesville, FL, United States of America

Hyun Jong Park