Samsung Electronics Co., Ltd.

Dongjin Semichem Co., Ltd.

Samsung Display Co., Ltd.

Other

Samsung Display Devices Co., Ltd.

National Cancer Center

Hyun-Jin Kim

Chang-Soo Lee

Jae-Hyun Kim

Sung-Min Kim

Seong-Jin Jang

Min-Kyu Park

Kwang-il Park

Dae-Hyun Kim

Gi-Cherl Kim

Byung-Chul Kim

Jae-Yong Jeong

Ho-young Song

Deog-Bae Kim

Kyung-Min Kim

Sang-Yu Lee

Yeo-jun Yoon

Joon-kyu Seo

Young-Joon Choi

Ju-Young Yoon

Seok-Hyun Nam

Woo-Jin Lee

Jeong-Don Ihm

Yong-Kyu Lee

Hyuk-Hwan Kim

Yeun-bae Kim

Young-jun Park

Jong-Jin Park

Hyeon Koon Myeong

Hyun-jeong Lee

Seok-soo Lee

Jang-woo Lee

Joon-Kyu Seo

Jean-Ho Song

Yool Kang

Nipun Kumar

Chi-O Cho

Ji-hye Chung

Sang-Bo Lee

Sang-Joon Hwang

Dong-Min Yeo

Tae-suh Park

Hee-seok Jeong

Kyoung-Ho Kim

Hye-Ran Kim

Geun-Ho Lee

Hyun-Jung Song

Ju-Youn Lee

Moon-joo Lee

Shi-Yun Cho

Hee-Tae Kim

Ki-Jun Kim

Sung-Sik Yoo

Dong-Seok Ryu

Hyo-Jung Roh

Jeong-sik Kim

Sang-Jeoung Kim

Jong-Kyoung Park

Jeong-Don Lim

Sang-Hyuck Yoon

Seung-Nyung Chung

Chung-Ho Yu

Dong-Chin Lee

Dae-hoon Na

Man-Ho Han

Dong-Kyu Ju

Min-Jeong Wang

Jung-Youl Lee

Seon-Bae Kim

Soo-Woong Lee

Kyung-Lyul Moon

Jin-A Ryu

Yong-Doo Choi

Yong-Yeon Lee

Hye-Eun Park

Kwang-II Park

Nam-Su Kim

So-Jin Ryu

Dong-Kyu Choi

Siddharth Katare

Steve J Park

Won-seok Chang

Young-Ju Lee

Tae-Il Lee

Yong-Joon Choi

Yoon-Sik Chung

Hong-gyu Choi

Dong-wook Han

Yu-Jin Jeoung

Hyung-Su An

Jin-Yeol Yun

Hyun-Ki Park

Ho-Kyong Lee

Byoung-Yong Kim

Woong-Ki Jeon

Kwang-jin Park

Kyung-A Kang

Ji-Yeon Kwak

Jung-Joo Sohn

Se-Jin Kwak

A memory device includes a non-volatile memory and a memory controller for writing data received from a host to the non-volatile memory. The memory controller is configured to receive, from the host, first data integrity field (DIF) information associated with the data, the first DIF information including individual cyclic redundancy check (CRC) information generated based on the data; generate, based on the first DIF information, second DIF information having a structure that is different from a structure of the first DIF information; and write the second DIF information to the non-volatile memory.

Memory devices

A multi-namespace storage device includes a nonvolatile memory which includes a first memory block and a second memory block different from the first memory block, and a memory controller which receives, from a host, a command for requesting creation of a first namespace including a first logical block number and a second namespace including a second logical page number not included in the first logical block number and receives a physical mapping command for instructing physical mapping of the first namespace. The memory controller performs a first mapping operation by mapping the first logical block number to the first memory block and performs a second mapping operation by mapping the second logical page number to a second memory page included in the second memory block in response to the physical mapping command.

Multi-namespace storage device, electronic system including the storage device, and method of operating the storage device

A nonvolatile memory device may include a plurality of memory planes and a plurality of plane-dedicated pad sets. The plurality of memory planes may include a plurality of memory cell arrays including nonvolatile memory cells and a plurality of page buffer circuits. Each of the plurality of page buffer circuits may be connected to ones of the nonvolatile memory cells included in each of the plurality of memory cell arrays through bitlines. A plurality of plane-dedicated pad sets may be connected to the plurality of page buffer circuits through a plurality of data paths respectively such that each of the plurality plane-dedicated pad sets is dedicatedly connected to each of the plurality of page buffer circuits. A bandwidth of a data transfer may be increased by reducing a data transfer delay and supporting a parallel data transfer, and power consumption may be decreased by removing data multiplexing and/or signal routing.

Nonvolatile memory devices including memory planes and memory systems including the same

The present invention relates to an antibody-fluorescent dye conjugate capable of cancer cell-specific fluorescence imaging diagnosis. The fluorescent dye comprises a covalently labeled antibody and is quenched by interaction with an amino acid residue such as tryptophan, tyrosine, histidine, and methionine in the antibody and upon binding of the antibody to an antigen present on a cell surface to emit fluorescence, whereby cells having a target antigen thereon can be imaged for diagnosis. When using the antibody-fluorescent dye conjugate according to the present invention during in vitro cell assays, high-throughput screening of cells, and cytodiagnosis based on microfluidics, the presence of cancer cells having a specific antigen expressed thereon can be detected at high specificity and sensitivity without a washing process, and the position of primary and metastatic cancer cells can be detected at high contrast within a short time.

Antigen responsive antibody-fluorescent dye conjugate and method for fluorescence detection and imaging of target cell using the same

A non-volatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit, and a control logic circuit. The page buffer circuit includes a plurality of first page buffers and a plurality of second page buffers, each including a sense latch, a data latch, and a cache latch. The sense latch senses data stored in the memory cell array and dumps the sensed data to the data latch, the data latch dumps the data dumped by the sense latch to the cache latch, and the cache latch transmits the data dumped by the data latch to a data I/O circuit. While the cache latch included in at least one of the plurality of first page buffers is performing a data transmit operation, the data latch included in at least one of the plurality of second page buffers performs a data dumping operation.

Non-volatile memory device and operation method of the same

A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

Methods of forming patterns using compositions for an underlayer of photoresist

A multi-chip package capable of testing internal signal lines including a printed circuit board, a first semiconductor chip mounted on the printed circuit board and including a test circuit, and second semiconductor chips mounted on the printed circuit board and electrically connected to the first semiconductor chip via a plurality of internal signal lines may be provided. The test circuit may be configured to enable circuits of the first semiconductor chip connected to pads contacting the plurality of internal signal lines, transmit complementary data to at least two pads from among the pads, and form a current path in the circuits connected to the at least two pads, thereby detecting a short-circuit between the internal bonding wires.

Multi-chip package capable of testing internal signal lines

A single-ended sense amplifier and a memory device including the same are presented. A sense amplifier, which senses and amplifies data of a memory cell, may include a precharge circuit pre-charging a data line which is connected to the memory cell and provides a sensing voltage, and a reference line which provides a reference voltage, with a power supply voltage; a reference voltage generating circuit which generates the reference voltage by discharging the reference line based on a reference current, and adjusts an amount of the reference current based on the data of the memory cell; and a comparator which compares the sensing voltage and the reference voltage, and outputs a comparison result as the data of the memory cell.

Sense amplifier and memory device using the same

A thin film transistor substrate includes a switching element comprising a gate electrode electrically connected to a gate line extending in a first direction, an active pattern overlapping with the gate electrode, a source electrode disposed on the active pattern and electrically connected to a data line extending in a second direction crossing the first direction, and a drain electrode spaced apart from the source electrode. The thin film transistor substrate further includes an organic layer disposed on the switching element, a first electrode disposed on the organic layer, and a second electrode overlapping with the first electrode, and electrically connected to the drain electrode. A thickness of the second electrode is thicker than a thickness of the first electrode.

Thin film transistor substrate and method of manufacturing the same

A semiconductor package includes an external electrode, an interface chip, and a semiconductor chip. The interface chip includes an external interface pad bonded to the external electrode, a plurality of internal interface pads, and an interface circuit coupled between the external interface pad and the plurality of internal interface pads. The semiconductor chip includes a signal pad that is selectively bonded to one of the plurality of internal interface pads. The interface circuit activates a connection between a selected pad, which corresponds to a pad that is bonded to the signal pad among the plurality of internal interface pads, and the external interface pad, and deactivates connections between unselected pads, which correspond to pads that are not bonded to the signal pad among the plurality of internal interface pads, and the external interface pad.

Semiconductor packages usable with semiconductor chips having different pad arrangements and electronic devices having the same

A cathode active material including a composite transition metal oxide including: sodium; a first transition metal; and a second transition metal, wherein the composite transition metal oxide has a first diffraction peak corresponding to a Miller index of (003) and derived from a layered rock salt structure, and a second diffraction peak corresponding to a Miller index of (104) and derived from a cubic rock salt structure in an X-ray powder diffraction (XRD) pattern, wherein an intensity ratio (I/I) of the first diffraction peak to the second diffraction peak is about 7 or greater.

Cathode active material, cathode including the cathode active material, and sodium secondary battery including the cathode

Provided is an energy harvesting device having a self-powered touch sensor so that the energy harvesting device is capable of sensing pressure due to an external touch without using external power and harvesting and storing energy generated in response to the touch pressure. The energy harvesting device includes first and second electrodes facing each other, an energy generation layer disposed on the first electrode, and an elastic layer disposed on the second electrode layer, the elastic layer facing the energy generation layer and being configured to be elastically deformed according to pressure applied to the elastic layer. The energy generation layer is configured to generate energy according to the pressure applied to the energy generation layer.

Energy harvesting device having self-powered touch sensor

An isocyanurate compound for forming an organic anti-reflective coating layer, which has superior stability and etch rate at a high temperature, and which has a high refractive index, is represented by following Formula 1.  In Formula 1, R is independently a hydrogen atom or a methyl group, Ris independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 6 of hetero atoms, and Rindependently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 15 of hetero atoms, wherein, Rcan have at least two bonding parts, and in the case that Rhas at least two bonding parts, the rest parts except Rof the compounds represented by Formula 1 can connect to the Rto form a polymer structure.

Isocyanurate compound for forming organic anti-reflective layer and composition including same

A backlight assembly comprising: a plurality of fluorescent lamps each including a lamp tube having a fluorescent layer, a discharge gas contained in the lamp tube, a first electrode disposed in the lamp tube, and a conductive terminal capacitively coupled to the first electrode; and a lamp socket which secures the plurality of fluorescent lamps.

Backlight assembly and a display device having the same

Growing community of inventors

Gyeonggi-do, South Korea

Hyun-Jin Kim