Samsung Sdi Co., Inc.

Cheil Industries Inc.

Samsung Electronics Co., Ltd.

Cheil Industry, Inc.

Hyun-Ji Song

Yun-Jun Kim

Youn-Hee Nam

Seung-Hee Hong

Yoo-Jeong Choi

Hea-Jung Kim

Taek-Soo Kwak

Chung-Heon Lee

Han-Song Lee

You-Jung Park

Joon-Young Moon

Eun-Su Park

Yoong-Hee Na

Go-Un Kim

Yu-Shin Park

Young-Min Kim

Sang-Kyun Kim

Yong-Woon Yoon

Sung-Hwan Kim

Jin-Hee Bae

Mi-young Kim

Hyo-Young Kwon

Kwen-Woo Han

Dominea Rathwell

Sang-Hak Lim

Bo-Sun Kim

Byeong-Gyu Hwang

Jin-Woo Seo

Sun-Hae Kang

Min-Soo Kim

Tae-ho Kim

Ran Namgung

Hui-Chan Yun

Seulgi Jeong

Wan-Hee Lim

Seung-Hyun Kim

Soo-Hyoun Mun

Hyeon-Il Jung

Yu-Mi Heo

Bong-Hwan Kim

Seung-Wook Shin

Byeri Yoon

Yo-Choul Park

Sung-Min Kim

Dong-Geun Lee

Youn-Jin Cho

Tae-kyung Lee

Tae-Kyung Lee

Songse Yi

Jae-Yeol Baek

Naery Yu

Woo-Taek Song

Yeon-Hee Jo

Jong-Dae Jeon

Sun Young Yang

MyeongKoo Kim

Won-Jong Hwang

Sun-Min Hwang

An electronic device according to various embodiments may include a first connector including at least one first pin and at least one second pin configured to be connected to an external electronic device; a second connector comprising at least one third pin and at least one fourth pin configured to be connected to a power supply; a switching circuit; and a processor electrically connected to the first connector, the second connector, and the switching circuit, wherein the processor is configured to determine a connection with the external electronic device or a connection with the power supply, and the processor is set to cause, when connected to the external electronic device via the first connector and connected to the power supply via the second connector, power received from the power supply via the at least one third pin to be supplied to the at least one first pin using the switching circuit.

Method and electronic device for controlling power between electronic devices

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A monomer, an organic layer composition including the monomer, an organic layer, and a method of forming patterns, the monomer being represented by Chemical Formula 1: 

Monomer, organic layer composition, organic layer, and method of forming patterns

A polymer including a moiety represented by Chemical Formula 1, an organic layer composition including the polymer, an organic layer manufactured from the organic layer composition, and a method of forming patterns using the organic layer composition are provided. The definitions of the Chemical Formula 1 are the same as defined in the detailed description.

Polymer, organic layer composition, organic layer, and method of forming patterns

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

An organic layer composition, an organic layer, and associated methods, the composition including a polymer that includes a moiety represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, and a solvent, 

Organic layer composition, organic layer, and method of forming patterns

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.*-A-B&#x2014;*&#x2003;&#x2003;[Chemical Formula 1] In the Chemical Formula 1, A and B are the same as defined in the detailed description.

Hardmask composition and method of forming patterns using the hardmask composition

A polymer includes a structural unit represented by Chemical Formula 1 and an organic layer composition including the same. wherein in Chemical Formula 1, A is a carbon cyclic group including at least one hetero atom, B is one of groups in Group 1, where Arto Ar, Rto R, L and m are as defined in the specification and * is a linking point. When the carbon cyclic group includes at least two hetero atoms when the carbon cyclic group includes a pentagon cyclic moiety and the pentagon cyclic moiety includes a nitrogen atom (N) as a hetero atom, and the at least two hetero atoms are the same or different: 

An organic layer composition, an organic layer, and a method of forming patterns, the composition including a polymer that includes a substituted or unsubstituted fluorene structure, an additive represented by Chemical Formula 1, and a solvent: 

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: 

Monomer for hardmask composition, hardmask composition including the monomer, and method of forming patterns using the hardmask composition

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1: 

Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.  In the Chemical Formula 1,

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Suwon-si, South Korea

Hyun-Ji Song