Samsung Electronics Co., Ltd.

Hyun-Jeong Yang

Bong-jin Kuh

Yong-Suk Tak

Wan-don Kim

Byung-Hong Chung

Soon-Wook Jung

A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Growing community of inventors

Hwaseong-si, South Korea

Hyun-Jeong Yang