Yonsei University

Samsung Display Co., Ltd.

Lg Hausys, Ltd.

Hyundai Motor Company

Lg Display Co., Ltd.

Doowon Technical College

Doowon Electronics Co., Ltd

Hyun Jae Kim

Young Jun Tak

Gun Hee Kim

Woong Hee Jeong

Dong Hyun Choi

You Seung Rim

Won Kyung Min

Dongwoo Kim

Jeong Woo Park

Hyun Soo Shin

Min Seong Kim

Gwan In Kim

Heesoo Lee

Jong Bin An

Jusung Chung

Kyung Ho Kim

Jun Hyung Lim

Hyung Tae Kim

Byung Du Ahn

Seong Moon Jung

Sujin Jung

Tae Soo Jung

Ka Young Lee

Dong Lim Kim

Jin Hyeok Lee

Seokhyun Yoon

Eun Joo Kim

Won Jun Park

Yun Jung Choi

Tae Hoon Jeong

Doo Hyun Yoon

Myung Ho Lee

Ji Hoon Park

Su Seok Choi

Jeong Min Moon

Taesang Kim

Tae Jin Lee

Tae Sang Kim

Ki Chun Lee

Yong Kim

Sungpil Ryu

Ji Yong Lee

Tae Hun Jung

Kiseok Chang

Jihwan Jung

Byung Ha Kang

Kyung Min Kim

Joohye Jung

Myung Woo Lee

Seung Won Lee

Geonho Lee

Ju Hyung Lee

Si Joon Kim

I Sak Lee

Seok Gyu Hong

Moon Ho Lee

Jae Won Na

Kyung Ho Park

Won-Gi Kim

Sung Pyo Park

Jong Hyuk Ahn

Yeong-gyu Kim

Seonghwan Hong

Hee Jun Kim

Wongi Kim

Jung Hyeon Bae

Jeong Moo Kwon

Hyuk Joon Yoo

Kunho Moon

The present exemplary embodiments provide a sensor of monitoring a biosignal in a low power mode or a high precision mode by interacting a plurality of photo transistors implemented by light absorption layers having different organic orientations by a solution process and a manufacturing method thereof.

Skin-conformable biosignal monitoring sensor by applying organic-inorganic hybrid photo transistor and manufacturing method thereof

Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.

Oxide thin film transistor including photocatalyst layer and method for manufacturing the same

A stretchable display device capable of correcting resolution depending on a stretching degree is disclosed. The stretchable display device includes a stretchable substrate, first light emitting pixels including first light emitting elements arranged spaced apart from each other on the stretchable substrate, deformation switch parts arranged between the first light emitting pixels on the stretchable substrate and stretched and deformed according to stretch of the stretchable substrate, and second light emitting pixels including second light emitting elements arranged between the first light emitting pixels on the stretchable substrate. The second light emitting pixels are controlled to emit light depending on physical deformation of the deformation switch parts.

Stretchable display device

A resolution controller for a stretchable display includes a resolution-setting multiplexer module to receive a resolution selecting signal and to apply a gate in panel (GIP) selecting signal, in response to the resolution selecting signal, and a GIP module configured to generate a gate driving signal in response to the GIP selecting signal applied by the resolution-setting multiplexer module, and apply the gate driving signal to a pixel driving flexible printed circuit board (FPCB) of the stretchable display to drive an open pixel depending on a stretched state of the stretchable display.

Device for controlling resolution of stretchable display

A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.

Transistor and display device including the same

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

Photo transistor and display device including the same

Disclosed is a driving circuit of a stretchable display capable of being stretched, which includes a driving part that includes a driving transistor connected with a light-emitting element and drives the light-emitting element depending on a signal of a data line, a switching transistor that is connected between the driving part and the data line and includes a gate terminal connected with a first gate line, and a stretch-sensitive sensor that is connected with the switching transistor between the driving part and the data line, and the stretch-sensitive sensor may include a stretch-sensitive material whose resistance characteristic changes depending on a stretching force applied to the stretchable display.

Driving circuit of stretchable display

An apparatus for driving a stretchable display includes a first pixel driving signal generating module to generate a first pixel driving signal including data to be displayed on a stretchable display, a first pixel driving circuit to receive the first pixel driving signal to drive a first pixel, a second pixel driving circuit to drive a second pixel, wherein the driving of the second pixel is determined depending on whether the stretchable display is stretched, and a second pixel driving signal generating module to receive the first pixel driving signal and a power signal and to generate a second pixel driving signal to be applied to the second pixel driving circuit by using one of the first pixel driving signal and the power signal, based on a stretching state signal generated depending on whether the stretchable display is stretched.

Apparatus for driving stretchable display

The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

Oxide semiconductor phototransistor improved in visible light absorption rate and manufacturing method thereof

A barrier film and a method of manufacturing the barrier film are provided. The method includes performing high-pressure thermal treatment under certain conditions on an oxide thin film deposited by sputtering deposition or atomic layer deposition (ALD) to manufacture a barrier film with improved moisture resistance. According to the method, moisture resistance of the barrier film can be improved at a low process temperature by using both thermal energy and pressure energy. The barrier film provided herein can be useful as a barrier film for solar cells.

Method for manufacturing barrier film with enhanced moisture resistance and barrier film manufactured by the same

Disclosed are an oxide thin-film transistor and a method of fabricating the same. The oxide thin-film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; and an oxide thin film formed on the gate insulating layer, wherein the oxide thin film include a channel region, source region and drain regions disposed on the channel region and spaced apart from each other, and a concentration profile due to a dopant diffused from the gate insulating layer, wherein the channel region operates as a channel layer by the concentration profile.

Oxide thin-film transistor and method of fabricating the same

Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300&#xb0; C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300&#xb0; C.

Oxide thin film transistor and method of fabricating the same

Disclosed is a method for repairing an oxide thin film, including repairing the oxide thin film by forming a repairing material that contains an oxide at a defect of the oxide thin film.

Method for repairing oxide thin film and oxide thin-film device

Provided is an outer cover material for a vacuum insulator, sequentially comprising: one or more layers of a polyester film; a polyvinyl alcohol (PVOH) film adhered to a lower surface of the polyester film; and a sealing film adhered to a lower surface of the PVOH film. Also provided is a vacuum insulator, comprising a core material consisting of a fiberglass; and the outer cover material under internal pressure, accommodating the core material.

Outer cover material for vacuum insulator and high-performance vacuum insulator comprising same

Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.

Oxide semiconductor device and method for manufacturing same

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Seoul, South Korea

Hyun Jae Kim