Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Yonsei University

Lg Hausys, Ltd.

Electronics and Telecommunications Research Institute

Industry-academic Cooperation Foundation

Hyun-Jae Kim

Sook-Young Kang

Seong-Moon Jung

Chang-Hyun Lee

Myung-Kwan Ryu

Kyung-bae Park

Chang-Sub Lee

Hyun-Soo Shin

Tae-Hyeong Park

Tae-Hyung Hwang

Oh-Kyong Kwon

Sung Cheol Chang

Jung-Won Kim

Chul Sik Yoon

Kwang Jae Lim

Eunkyung Kim

James S Im

Bo-Sung Kim

Kyung Soo Kim

Jae-Ho Kim

Myung Ho Lee

Myung-Koo Kang

Sang-Yoon Lee

Yeon-Gon Mo

Jong-Baek Seon

Jai-Hyuk Song

Sung Kyung Kim

Chaun-Gi Choi

Chul-Ho Kim

Il-Gon Kim

Won-Ik Kim

Jae Sun Cha

Cheol-Min Kim

Young-Gu Kim

Jin-young Choi

Jee Hwan Ahn

Juhee Kim

Su-Gyeong Lee

Woo-Suk Chung

Byung-Du Ahn

Dong-Byum Kim

Woong-Hee Jeong

Joo-Hwan Seo

Dong-Il Lee

Dong-yean Oh

Gun-Hee Kim

Hyun-Soo Lim

Tae-Hun Jung

Hye-Youn Jang

Ji-Hun Lim

You-Seung Rim

Choong-Hee Lee

Chang-Won Hwang

Jin-Hyun Park

Ju-Hyung Lee

Do-Kyung Kim

Kook-chul Moon

Doo-Na Kim

Kee-Chan Park

Myung-Su Kang

Hyeon-Sik Kim

Dae-Sin Kim

Shin-Dong Ryu

Myung Woo Lee

Yeon-Hong Kim

Doo-Hyoung Lee

Yeon-Taek Jeong

Eun-Joo Kim

Ui-Jin Chung

Eun-Hye Park

Hyun-Sook Shim

Gyu-Sun Moon

Si-Joon Kim

Jeong-Yong Kim

Tae-Soo Jung

Sang-Bae Shin

Dong-Lim Kim

Doh-Kyung Kim

An electronic device and method are disclosed. The method is operable on the electronic device to parse attribute information of an electronic document displayed on a display unit of the electronic device, and when a component of the electronic document is activated, detect a format of the activated component based on the parsed attribute information, and when the detected format indicates visual media, output an alternative notification comprising at least one a notification in a different format than the detected format.

Method for providing alternative service and electronic device thereof

A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is a SiOfilm, the photocatalyst layer comprises an amorphous TiOfilm, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiOfilm. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a silicate precursor to obtain a SiOsol by dehydration and de-alcoholization reaction; applying and drying the SiOsol on a substrate to form a barrier layer; adding an alcohol solvent and an acid to a titanium precursor to obtain a TiOamorphous sol by dehydration and de-alcoholization reaction; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiOamorphous sol on the barrier layer, to form a photocatalyst layer.

Photocatalyst functional film and method for producing the same

A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is an amorphous TiOfilm, the photocatalyst layer comprises an amorphous TiOfilm, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiOfilm. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a titanium precursor to obtain a TiOamorphous sol by dehydration and de-alcoholization reaction; applying and drying the TiOamorphous sol on a substrate to form a barrier layer; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiOamorphous sol on the barrier layer, to form a photocatalyst layer.

The present invention provides a glass fiber board comprising a glass fiber and an inorganic binder, wherein the inorganic binder comprises an aluminum phosphate. The present invention provides a method for preparing the glass fiber board comprising (a) preparing an inorganic binder solution comprising an aluminum phosphate (b) applying the inorganic binder solution comprising the aluminum phosphate to a glass fiber; (c) compressing the glass fiber to which the inorganic binder solution comprising the aluminum phosphate is applied; and (d) drying the compressed glass fiber.

Glass fiber board comprising inorganic binder and method for preparing the same

A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

Thin film transistor substrate and method of manufacturing the same

A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Methods of forming oxide semiconductor devices and methods of manufacturing display devices having oxide semiconductor devices

Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Method of formation of tin oxide semiconductor thin film doped with antimony

According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same

A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Polysilicon thin film transistor array panel and manufacturing method thereof

A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

Device for irradiating a laser beam

A management device of a stopping or moving base station includes: an information acquisition unit that acquires first information about wireless environment from a neighboring base station and that acquires second information about the wireless environment by connecting to a backbone network; a position estimating unit that estimates a position of the neighboring base station based on the first information; and an operation condition selection unit that selects radio resources based on at least one of the first information and the second information.

Device for managing of base station and method for managing thereof

Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.

Local crystallization by heat treatment

A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Solution composition for forming oxide thin film and electronic device including the oxide thin film

In a computer-implemented method of designing a nonvolatile memory device, first parameters associated with external environmental conditions are set. Second parameters associated with structural characteristics and internal environmental conditions are set. A first initial operation condition associated with an erase operation is determined based on the first and second parameters. A second initial operation condition associated with a program operation is determined based on the first and second parameters and the first initial operation condition. A final operation condition associated with reliability is determined based on the first and second parameters, and the first and second initial operation condition.

Method of designing nonvolatile memory device

A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.

Methods of fabricating non-volatile memory devices including double diffused junction regions

Growing community of inventors

Seongnam, South Korea

Hyun-Jae Kim