Cheil Industries Inc.

Hyun Hoo Sung

Jong Seob Kim

Dong Seon Uh

Jin Ho Bae

Chang Soo Woo

Chang Se Woo

Sun Yul Lee

Seung Bae Oh

Jin Hee Bae

Dae Yun Kim

A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.

Compound for gap-filling of semiconductor device and coating composition using the same

A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4:[RO]Si&#x2014;[CH]&#x2014;Si[OR]&#x2003;&#x2003;(1)

Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same

A polymer for filling gaps in a semiconductor substrate and a composition using the polymer are provided. According to the composition, holes having a diameter of 100 nm or less and an aspect ratio (i.e. a ratio between the diameter and height of the holes) of 1 or higher in semiconductor substrates can be substantially completely filled by common spin coating without formation of defects, e.g., air voids, the film can be dissolved by an aqueous alkaline solution (i.e. a developing solution) until a desired thickness is reached, the film is highly resistant to isopropyl alcohol (IPA) and plasma etching after curing by baking, and residue can be rapidly removed from the inside of the holes by ashing.

Polymer for filling gaps in semiconductor substrate and coating composition using the same

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Gyeonggi-do, South Korea

Hyun Hoo Sung