Applied Materials, Inc.

Hyun-Ho Doh

Sathyendra Ghantasala

Vijayakumar C Venugopal

Vahid Firouzdor

Christopher L Beaudry

Joseph Frederick Behnke

Joseph Frederick Sommers

Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Yttrium oxide based coating composition

A system for verifying the operation of RF generators and resulting pulse waveforms in semiconductor processes includes a process chamber, a profile sensor, an optical sensor and a controller. A process implemented by the controller of the system for verifying the operation of RF generators and resulting pulse waveforms in semiconductor processes includes generating a pulse profile of a pulse shape of an RF generator under test, selecting a stored, representative profile of an RF generator known to be operating correctly to compare to the profile generated for the RF generator for a same pulse mode, defining a quantitative metric/control limit to identify similarities and/or differences between pulses of same pulse modes between the generated profile of the RF generator and the stored profile, comparing the generated profile and the selected stored profile, and determining if the RF generator under test is operating properly based on the comparison.

Pulse system verification

Methods of operating and assembling a plasma chamber are disclosed. An operating method includes tuning a match network of a plasma chamber while running a non-plasma discharge recipe. A hardware impedance of the plasma chamber is calculated from the match network settings from the tuning. A match loss for the plasma chamber is also calculated according to match network settings. A radio frequency (RF) power setting for the first plasma chamber is set according to the calculated hardware impedance and the calculated match loss. Such methods can be utilized to provide chamber-to-chamber performance matching across different plasma chambers. Certain disclosed methods of operating the plasma chamber can be utilized to identify hardware faults during operation and/or assembly processes.

Methods and apparatuses for plasma chamber matching and fault identification

A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (RF) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied RF signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.

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San Ramon, CA, United States of America

Hyun-Ho Doh