Electronics and Telecommunications Research Institute

Hyun-Gyu Jang

Chi Hoon Jun

Sang Choon Ko

Dong Yun Jung

Young Rak Park

Minki Kim

Hyung Seok Lee

Jeho Na

Hyun Soo Lee

Junbo Park

Eun Soo Nam

Woojin Chang

Myungjoon Kwack

Jong-Moon Park

Provided is a high voltage bridge rectifier. The high voltage bridge rectifier includes a supporter, a substrate on the supporter, a plurality of equivalent diode circuits mounted on the substrate, interconnection lines, and terminals. The substrate may include an insulation layer, element pads disposed on a center of the insulation layer, and terminal pads disposed on an edge of the insulation layer to surround the element pads.

High voltage bridge rectifier

A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.

Semiconductor device with passivation layer for control of leakage current

Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.

Bridge diode

Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.

Hybrid diode device

Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.

Power semiconductor module and method for stabilizing thereof

Growing community of inventors

Cheongju-si, South Korea

Hyun-Gyu Jang