Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Hyun-Gue Kim

Keun-Ho Jang

Sang-Soo Kim

Ki-Yong Lee

Dong-Hyun Lee

Jin-Wook Seo

Byoung-Keon Park

Tae-Hoon Yang

Jong-Ryuk Park

Kil-Won Lee

Su-Hyoung Kang

Bo-Kyung Choi

Hong-Ro Lee

Maxim Lisachenko

Jong-Oh Seo

Jong-Jun Baek

A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

Thin film transistor, method of manufacturing the same and liquid crystal display apparatus having the same

A display device includes a substrate; a color filter layer positioned on the substrate correspondingly to a path where an image is outputted; and an organic overcoat layer covering the color filter layer and including an ion implantation layer coated on the surface.

Display device and method for manufacturing display device

A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same

According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion implantation assembly to implant ions into a partial region of the substrate. This allows for a compact ion implantation system to implant ions into a very large substrate. The substrate moves through the ion implantation system in a first direction, turns around, and then moves back through the ion implantation system in a second and opposite direction, where ions are implanted into the substrate while the substrate is moving in both directions. The path in the first direction can be spaced-apart from the path in the second direction to allow for two substrates to be processed simultaneously.

Ion implantation system and ion implantation method using the same

A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.

Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor

An apparatus and method for inspecting polycrystalline silicon (Poly-Si) that illuminates light onto protrusions in the Poly-Si in order to determine a distance between them using intensity and reflection angle of reflected light. The Poly-Si inspection apparatus includes a light source that illuminates light, and a reflected light detector for receiving reflected light, wherein a distance between protrusions is measured by an incident angle of the light illuminated into the protrusion from the light source, a detection angle of the reflected light detector, and a wavelength of the detected reflected light.

Apparatus and method for inspecting poly-silicon

Growing community of inventors

Yongin, South Korea

Hyun-Gue Kim