Samsung Display Co., Ltd.

Yonsei University

Samsung Display Devices Co., Ltd.

Samsung Displayco., Ltd.

Hyun Eok Shin

Ju Hyun Lee

Gyung Min Baek

Sang Won Shin

Dong Min Lee

Joon Yong Park

Hong Sick Park

Sang Gab Kim

Chan Woo Yang

Su Kyoung Yang

Sang Woo Sohn

Joon Geol Lee

Kyeong Su Ko

Do Keun Song

Hyun Ah Sung

Shin Il Choi

Sung Joo Kwon

Jung Hak Nam

Jungsub Lee

Tae Wook Kang

Jaejin Lyu

Byung Soo So

Yun Jong Yeo

Chang Oh Jeong

Hyeon Sik Kim

Yoonkyoo Lee

Jinwon Sun

Mann Ho Cho

Kwang Sik Jeong

Jin Su Park

Hyun Min Cho

Byung-Hee Kim

Ji Hun Kim

Moo Soon Ko

Sun Hwa Kim

Su-Hyoung Kang

Gug Rae Jo

Su Jin Choi

Sunwoo Kang

Jin Goo Jung

Kang Soo Han

Jong Hyun Choung

Kyung Hyun Choi

Jin-Won Sun

Dae Won Choi

Moon Jung An

Seung In Baek

Young Il Choi

Jae Uoon Kim

Jin Seock Ma

Young Rok Kim

Youn Ho Han

Hojung Syn

Hyun Ji Ha

Young Eun Park

Seung Gon Kang

Hyeon Hwan Kim

Bohyun Yoon

Kyu Soon Park

A light control film includes a first light absorbing layer, a first organic layer disposed on the first light absorbing layer, and a second light absorbing layer disposed on the first organic layer. At least one of the first light absorbing layer and the second light absorbing layer includes a first layer including a metal oxide, a second layer disposed on the first layer and including a metal, and a third layer disposed on the second layer and including a metal oxide.

Light control film and display device including the same

A display devise is provided. A display device includes a substrate, a lower metal pattern disposed on one surface of the substrate, a buffer layer disposed on the one surface of the substrate to cover the lower metal pattern, a semiconductor layer disposed on the buffer layer, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film, wherein the lower metal pattern includes an antireflection layer disposed on the one surface of the substrate and a conductive metal layer disposed on one surface of the antireflection layer, and the antireflection layer includes molybdenum oxide (MoOx) and at least one of zinc oxide (ZnOx) and indium oxide (InOx).

Display device having a conductive metal layer disposed on a surface of an antireflection layer

A display device includes a first substrate including a display area and a pad area, which is on one side of the display area, a plurality of conductive layers each including a plurality of wires and conductive patterns, which are in the display area and the pad area, on the first substrate, a via layer on the plurality of conductive layers, a first electrode and a second electrode on the via layer, in the display area, to be spaced apart from each other, a first insulating layer on the first electrode and the second electrode, a plurality of light-emitting elements on the first electrode, the second electrode, and on the first insulating layer, and a first connecting electrode on the first electrode and in contact with the plurality of light-emitting elements, and a second connecting electrode on the second electrode and in contact with the plurality of light-emitting elements, wherein at least one of the plurality of conductive layers includes a metal layer, which includes a copper-silver (CuAg) alloy and has a crystal grain size of 140 nm or less.

Wiring substrate and display device including the same

A display device includes a substrate; an anode electrode disposed on the substrate; a first anti-contact layer disposed on the anode electrode and including molybdenum trioxide (MoO); a second anti-contact layer disposed on the first anti-contact layer and including molybdenum dioxide (MoO); and a pixel-defining layer disposed on the second anti-contact layer, wherein the first anti-contact layer includes a first opening, wherein the second anti-contact layer includes a second opening, wherein the pixel-defining layer includes a third opening, and wherein the first opening, the second opening and the third opening overlap one another and expose the anode electrode.

Display device including multiple anti-contact layers and method of fabricating the same

Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Display device

A display device includes an optical sensor, a display panel disposed on the optical sensor, and a touch sensing panel disposed on the display panel. The touch sensing panel includes a first sensing area corresponding to an area in which the optical sensor is disposed, and a second sensing area distinct from the first sensing area. The touch sensing panel further includes first conductive patterns extending in a first direction, and second conductive patterns extending in a second direction intersecting with the first direction. First opening areas are provided by the first conductive patterns and the second conductive patterns disposed in the first sensing area. Second opening areas are provided by the first conductive patterns and the second conductive patterns disposed in the second sensing area. A surface area of each of the first opening areas is greater than a surface area of each of the second opening areas.

An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes an emission layer and a buffer layer between the emission layer and the second electrode, the buffer layer directly contacts the emission layer and includes a first compound and a quinolinolato-based metal complex, and the first compound is a compound including at least one electron transporting moiety.

Organic light-emitting device

An organic light-emitting device includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes an emission layer having a first layer, and the first layer includes a first compound, a second compound, and a third compound. The first compound is a hole transporting host compound, the second compound is an electron transporting host compound, and the third compound is a hole transporting host compound or an electron transporting host compound. The first compound and the second compound form a first exciplex, and the first compound and the third compound, or the second compound and the third compound form a second exciplex, where the first exciplex and the second exciplex are different from each other.

Organic light-emitting device including a first exciplex and a second exciplex in an emission layer

Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.

Display device including Ga doped indium tin oxide (ITO) based emission layer and manufacturing method thereof

A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Stacked structure including semiconductor structure and method of manufacturing the same

A display device is provided. A display device includes a non-display area where no image is displayed, and a display area where images are displayed, and including a first area and a second area having different light transmittances, and a first pixel and a second pixel, wherein a transistor and an anode electrode of the first pixel are in the first area, wherein an anode electrode of the second pixel is in the second area, and a transistor of the second pixel is outside the second area, wherein the anode electrode and the transistor of the second pixel are electrically connected by a connection line, and wherein at least a part of the connection line is in at least one of the first area and the second area, and is covered by an anti-reflection layer.

A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

Conductive pattern having first and second capping layers and display device including the same

An organic electroluminescence device includes: a first electrode; a second electrode facing the first electrode; and a plurality of organic layers disposed between the first electrode and the second electrode, wherein at least one organic layer of the plurality of organic layers includes a first compound represented by Formula 1, a second compound represented by Formula 2, and a third compound represented by Formula 3, wherein Formulae 1-3 are defined herein.

Organic electroluminescence device and organometallic compound for organic electroluminescence device

Growing community of inventors

Gwacheon-si, South Korea

Hyun Eok Shin