Samsung Electronics Co., Ltd.

Hyun-Deok Yang

Sang-Bom Kang

Sun-ghil Lee

Hyun-Jun Sim

Jae-young Park

Kang-Hun Moon

Han-ki Lee

Hyun-seung Kim

Sang-Mi Choi

A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal.

Manufacturing method for semiconductor device

Growing community of inventors

Seoul, South Korea

Hyun-Deok Yang