Nexus Photonics LLC

Other

Hyun Dai Park

Tin Komljenovic

Minh Tran

Chong Zhang

Yuval Charles Avniel

Mike S H Chu

Joseph D Nance

Aditya Malik

A device has a plurality of waveguide structures including two active (one of which comprises two sub-layers), two passive, and three intermediate waveguide structures on a common substrate. At least partial butt coupling between active and intermediate waveguide structures, and tapering in the intermediate and/or passive waveguide structures at each junction therebetween facilitates efficient optical mode transformations as optical signals travel through the device, either from a first sub-layer of the first active waveguide structure through the other sub-layer, then sequentially though a first intermediate waveguide structure, a passive waveguide structure, a second intermediate waveguide structure, a second active waveguide structure, a third intermediate structure, and a second passive waveguide structure; or in reverse from the second passive waveguide structure back through to the first sub-layer of the first active waveguide structure. Lithographic alignment marks facilitate precise mutual alignments between layers defining each of the waveguide structures.

Active-passive photonic integrated circuit platform

A device includes three elements fabricated on a common substrate. The first element includes an active waveguide structure having at least three sub-layers supporting a first optical mode. The second element has a passive waveguide structure supporting a second optical mode, and the third element, butt-coupled to the first element, has an intermediate waveguide structure supporting intermediate optical modes. One sub-layer in the active waveguide structure includes an n-contact layer, another sub-layer includes a p-contact layer, and a third sub-layer includes an active region. A tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and an intermediate optical mode. No adiabatic transformation occurs between that intermediate optical mode and the first optical mode. Mutual alignments of the three elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed fabrication of the elements.

Integrated GaAs active devices with improved optical coupling to dielectric waveguides

An optical device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element, fabricated on a planarized top surface of the first element, comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure, positioned such that a top surface of the intermediate structure underlies a bottom surface of the passive waveguide structure. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and the second optical mode. Mutual alignments of the first, second and third elements are defined using lithographic alignment marks.

Heterogeneously integrated photonic devices with improved optical coupling between waveguides

A device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure comprising: one portion, of effective cross-sectional area A, supporting a first optical mode; and a second portion, butt-coupled to the first portion, of effective cross-sectional area A&#x3e;A. The second element comprises a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the second portion, comprises an intermediate waveguide structure supporting intermediate optical modes. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and one intermediate optical mode. No adiabatic transformation occurs between any intermediate optical mode and the first optical mode. Mutual alignments of the elements are defined using lithographic marks.

Integrated active devices with enhanced optical coupling to dielectric waveguides

Multilayer ceramic chip capacitors which satisfy X7R requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers preferably contain BaTiO,as the major component and CaTiO,, BaO, CaO, SrO, Si0,, MnO,, Y,O,, and CoO as minor components in such proportions so that there are present 0.1 to 4 mol % CaTiO,, 0.1 to 2 mol % BaO, 0 to 1 mol % CaO, 0 to 1 mol % SrO, 0.1 to 5 mol % SiO,, 0.01 to 2 mol % MnO2, 0.1 to 3 mol % Y,O,, and 0.01 to 1 mol % CoO. The preferred form of the invention may be sintered in the temperature range 1,250 to 1,400&deg; C. in a reducing atmosphere having a humidified mixture of nitrogen and hydrogen. Additionally, a re-oxidation procedure may be utilized during the sintering cycle to optimize the resistance of the ceramic to dielectric breakdown.

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Goleta, CA, United States of America

Hyun Dai Park