Hynix Semiconductor Inc.

Hyun Chun Sohn

Se Aug Jang

Yong Soo Kim

Jae Geun Oh

Jae Sung Roh

A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.

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Seoul, South Korea

Hyun Chun Sohn