Lg Innotek Co., Ltd.

Hyun Chul Lim

Myung Hoon Jung

Yong Tae Moon

Rak Jun Choi

Sul Hee Kim

Jae Hoon Choi

Ki Young Song

An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system. A light-emitting element according to the embodiment may comprise: a first conductive semiconductor layer (); a second conductive semiconductor layer () disposed below the first conductive semiconductor layer (); an active layer () disposed between the first conductive semiconductor layer () and the second conductive semiconductor layer (); a plurality of holes (H) exposing parts of the first conductive semiconductor layer () to the bottom surface of the second conductive semiconductor layer () by penetrating the second conductive semiconductor layer () and the active layer (); first contact electrodes () electrically connected to the first conductive semiconductor layer () from the bottom surface of the second conductive semiconductor layer () through the plurality of holes (H); an insulation layer () disposed between the first contact electrode () and the plurality of holes (H); a bonding layer () electrically connected to the first contact electrodes (); a support member () disposed below the bonding layer (); a second contact electrode () electrically connected to the second conductive semiconductor layer (); and a first current-spreading semiconductor layer () inside the first conductive semiconductor layer () above the first contact electrode ().

Light-emitting element and lighting system

A light emitting device may include a first conductive type semiconductor layer, an active layer including a quantum well and a quantum wall on the first conductive type semiconductor layer, an undoped last barrier layer on the active layer; an AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1)-based layer on the undoped last barrier layer; and a second conductive type semiconductor layer on the AlInGaN-based layer. The undoped last barrier layer may be provided between the AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1)-based layer and a last quantum well which is closest to the second conductive type semiconductor layer among the quantum well and may include a first InGaN (0&#x3c;p1&#x3c;1) layer, an AlInGaN (0&#x3c;q1, q2&#x3c;1) layer on the first InGaN layer, and a second InGaN (0&#x3c;p2&#x3c;1) layer on the AlInGaN layer.

Light emitting device and lighting system

A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

Light emitting diode and light emitting device package including the same

A light emitting device is disclosed. The light emitting device includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer interposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer. The second-conductive-type semiconductor layer includes an electron blocking region closely disposed to the active layer and having a pattern with a plurality of elements spaced apart from each other.

Light emitting device

A light emitting device includes a first conductive semiconductor layer (), an active layer () including a quantum well () and a quantum barrier () on the first conductive semiconductor layer (). An undoped last barrier layer () is provided on the active layer (), and an AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1)-based layer () is provided on the undoped last barrier layer (). A second conductive semiconductor layer () is provided on the AlInGaN-based layer ().

Growing community of inventors

Seoul, South Korea

Hyun Chul Lim