Magnachip Semiconductor, Inc.

Other

Sk Keyfoundry Inc.

Key Foundry Co., Ltd

Hyun Chul Kim

Jung Hwan Lee

Kwang Il Kim

Min Kuck Cho

Yang Beom Kang

Kyung Ho Lee

Hee Baeg An

In Chul Jung

Yon Sup Pang

A semiconductor device is provided. The semiconductor device includes a first region having a first gate structure disposed on a substrate and a second region having a second gate structure disposed on the substrate, a hard mask formed on the substrate, the first gate structure, and the second gate structure, a deep trench formed in the substrate between the first region and the second region, and formed to penetrate the hard mask to reach an inside of the substrate, and a planarized gap-fill insulating layer formed on the second gate structure and formed inside the deep trench. A topmost surface of the planarized gap-fill insulating layer and a topmost surface of the hard mask are coplanar.

Semiconductor device with deep trench isolation

A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device

Ear tip

An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.

Integrated semiconductor device having isolation structure for reducing noise

The present examples relate to a Schottky diode having floating guard rings and an additional element isolation layer configured to further improve a breakdown voltage of the Schottky diode, while maintaining the turn-on voltage and current in the forward characteristic, compared to a related Schottky diode. The floating guard rings in the examples are located in a position between the anode and the cathode regions or under the anode.

Schottky diode having floating guard rings

Growing community of inventors

Chilgok-gun, South Korea

Hyun Chul Kim