Samsung Electronics Co., Ltd.

Hyun-Chul Back

Joon-Sung Lim

Sung-Hun Lee

Keon-Soo Kim

Jong-Ho Park

Jong-Hyuk Kim

Seong-Soon Cho

Young-Bae Yoon

Kwang-Shik Shin

Jung-Hwan Park

In a method of forming a pattern structure, a cut-off portion of the node-separated line of a semiconductor device is formed by a double patterning process by using a connection portion of the sacrificial mask pattern and the mask pattern to thereby improve alignment margin. The alignment margin between the mask pattern and the sacrificial mask pattern is increased to an amount of the length of the connection portion of the sacrificial mask pattern. The lines adjacent to the node-separated line include a protrusion portion protruding toward the cut-off portion of the separated line.

Method of forming a pattern structure for a semiconductor device

A semiconductor memory device includes a device isolation layer formed in a semiconductor substrate to define a plurality of active regions. Floating gates are disposed on the active regions. A control gate line overlaps top surfaces of the floating gates and crosses over the active regions. The control gate line has an extending portion disposed in a gap between adjacent floating gates and overlapping sidewalls of the adjacent floating gates. First spacers are disposed on the sidewalls of the adjacent floating gates. Each of the first spacers extends along a sidewall of the active region and along a sidewall of the device isolation layer. Second spacers are disposed between outer sidewalls of the first spacers and the extending portion and are disposed above the device isolation layer. An electronic device including a semiconductor memory device and a method of fabricating a semiconductor memory device are also disclosed.

Semiconductor memory device including double spacers on sidewall of flating gate, electronic device including the same

Growing community of inventors

Suwon-si, South Korea

Hyun-Chul Back