Samsung Electronics Co., Ltd.

Hyun Chui Sagong

Jin Woo Kim

Sung Eun Kim

Sang Woo Pae

Choelhwyi Bae

Yang Gyeom Kim

A semiconductor device includes a first fin that protrudes from a substrate and extends in a first direction, a second fin that protrudes from the substrate and extends in the first direction, the first fin and the second fin being spaced apart, a gate line including a dummy gate electrode and a gate electrode, the dummy gate electrode at least partially covering the first fin, the gate electrode at least partially covering the second fin, the dummy gate electrode including different materials from the gate electrode, the gate line covering the first fin and the second fin, the gate line extending in a second direction different from the first direction, and a gate dielectric layer between the gate electrode and the second fin.

Growing community of inventors

Hwaseong-si, South Korea

Hyun Chui Sagong