Amkor Technology Singapore Holding Pte. Ltd.

Amkor Technology, Inc.

Hyun Cho

Ki Yeul Yang

Kyung Han Ryu

Do Hyung Kim

Curtis Michael Zwenger

Jin Han Kim

Jun Hwan Park

Ji Hun Lee

Dong Jin Kim

Won Myoung Ki

Seung Nam Son

Dong Hoon Han

Won Chul Do

Ramakanth Alapati

Jae Hun Bae

Seok Hun Yun

Bora Baloglu

Won Chul Do Do

Jae Hun Bae Bae

In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Semiconductor device and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Semiconductor device and manufacturing method thereof

Various aspects of the present disclosure provide a device that comprises an electronic device comprising a first device side, a second device side, and a first lateral device side. The example device may, for example, also comprise a substrate comprising a first substrate side, a second substrate side, and a first lateral substrate side. The substrate may, for example, comprise a first conductive pattern, a first barrier structure, and a second conductive pattern. The first conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first barrier structure may, for example, be on the first lateral side of the first conductive pattern. The second conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first lateral side of the second conductive pattern may, for example, be free of a metal barrier structure.

Semiconductor devices and methods of manufacturing semiconductor devices

Growing community of inventors

Yeosu-si, South Korea

Hyun Cho