Samsung Display Co., Ltd.

Hyun-cheol Shin

Sam-Young Cho

Jong-Hyun Choung

Ki-beom Lee

Gyu-po Kim

Won-guk Seo

Seung-yeon Han

Hong-Sick Park

In-Bae Kim

Wang-Woo Lee

Sang-Woo Kim

Bong-Kyun Kim

Youngmin Moon

Young-woo Park

Hong Sick Park

Jean-Ho Song

Sun-Young Hong

Hongsick Park

Young-jun Kim

Jae Woo Jeong

Nam-Seok Suh

Won-Guk Seo

Seon-II Kim

Do-Won Kim

Ki-Beom Lee

An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Etchant composition and methods of fabricating metal wiring and thin film transistor substrate using the same

An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Etchant composition, and method of manufacturing a display substrate using the same

A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Metal wire etchant and method of forming metal wire using the same

Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Etchant for metal wiring and method for manufacturing metal wiring using the same

Growing community of inventors

Hwaseong-si, South Korea

Hyun-cheol Shin