Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Lg Display Co., Ltd.

Hyun-Cheol Shin

Seong-Taek Hwang

Jeong-seok Lee

Bong-Kyun Kim

Sang-woo Kim

Dae-Woo Lee

In-kuk Yun

Sam-Young Cho

Ho-In Kim

Sang-Hyuk Lee

Gyu-Po Kim

Hong-Sick Park

Dae-Kwang Jung

Kitae Kim

Shi-Yul Kim

Jong-Hyun Choung

Byeong-Jin Lee

Sun-Young Hong

Ki-beom Lee

Seung-woo Kim

Jonghee Park

Jinseock Kim

Jong Hee Park

Won-Guk Seo

Yun-Je Oh

Hong-Seok Shin

Kyoung-Mook Lee

Young Kwang Kim

Jin Seock Kim

Sang Hyuk Lee

Seungbo Shim

Jinsuek Kim

Ki Tae Kim

Gyu-po Kim

Hyoung Sik Kim

Seung-Woo Kim

Jong-Il Kim

Kye-Chan Song

Changwoo Kwon

Dong Hun Lee

Byung Su Lee

Yong Hoe Kim

Dong Ho Kang

Yangil Jeon

Yong-su Lee

Ji-hun Park

Seokjun Jang

Ilbae Ahn

Ki Su Jung

Min Hye Lee

Sung-Tae Kim

Zheng Hong

Nam-Seo Kim

Young-Woo Park

Seung-Yeon Han

An etchant composition includes: an inorganic acid compound at 9.0 wt % to 9.9 wt %; an inorganic salt compound at 5.0 wt % to 10.0 wt %; an organic acid compound at 35 wt % to 45 wt %; a lactate-based compound at 10 wt % to 20 wt %; a nitrogen cyclic compound containing oxygen at 0.1 wt % to 1.0 wt %; and a remaining amount of water such that a total weight of the etchant composition is 100 wt %, wherein the inorganic acid compound is an etchant composition having an acid dissociation constant (pKa) value of −1.0 to −3.0.

Etchant composition and manufacturing method of display device using the same

An etchant composition of an embodiment may etch a multi-layered film of titanium/copper and may include about 5 wt % to about 20 wt % of persulfate, about 0.1 wt % to about 5 wt % of phosphoric acid or phosphate, about 0.01 wt % to about 2 wt % of a carbonyl ring compound, about 0.01 wt % to about 1 wt % of a 3-nitrogen ring compound, about 0.1 wt % to about 2 wt % of a 4-nitrogen ring compound, about 0.1 wt % to about 0.9 wt % of a fluorine compound, about 0.1 wt % to about 0.5 wt % of hydrogen about 1 wt % to about 3 wt % of a zwitterionic compound, and sulfate, water which is included in an amount that makes the total weight of the entire composition about 100 wt %.

Etchant composition, and method for manufacturing metal pattern and thin film transistor substrate using the same

An etching composition for a silver-containing thin film includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a metal-based oxidizer, and water.

Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same

An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.

Etching composition, method for forming pattern and method for manufacturing a display device using the same

An etchant composition is presented. The composition includes: 18 wt % to 25 wt % of a first organic acid compound; 15 wt % to 20 wt % of a second organic acid compound; 8.1 wt % to 9.9 wt % of an inorganic acid compound; 1 wt % to 4.9 wt % of a sulfonic acid compound; 10 wt % to 20 wt % of a hydrogen sulfate salt compound; 1 wt % to 5 wt % of a nitrogen-containing dicarbonyl compound; 1 wt % to 5 wt % of an amino acid derivative compound; 0.1 wt % to 2 wt % of an iron-containing oxidizing agent compound; and a balance amount of water.

Etchant composition and manufacturing method of metal pattern using the same

An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH)SO, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Etchant and method of manufacturing an array substrate using the same

A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.

Composition for removing conductive materials and manufacturing method of array substrate using the same

An optical transmitter including a multi-lambda source to output injection light consisting of a plurality of injection wavelengths in channels, a circulator having a first port, a second port, and a third port, the circulator receiving the injection light at the first port, and outputting the received injection light to the second port, and further receiving signal light at the second port, and outputting the received signal light to the third port, an arrayed waveguide grating having a multiplexing port connected to the second port of the circulator, and a plurality of demultiplexing ports, spectrum-slicing injection light received from the circulator at the multiplexing port into a plurality of injection channels, and outputting the injection channels to the demultiplexing ports and further receiving and multiplexing a plurality of signal channels at the demultiplexing ports, into a signal light, and outputting the signal light to the multiplexing port, and a plurality of reflective semiconductor optical amplifiers connected to the demultiplexing ports of the arrayed waveguide grating, respectively, each of the reflective semiconductor optical amplifiers receiving an associated one of the injection channels, and amplifying the associated injection channel to generate an associated one of the signal channels.

Optical transmitter and passive optical network using the same

A gain-clamped semiconductor optical amplifier is disclosed. The amplifier includes a gain waveguide for amplifying an optical signal input to the gain waveguide, and a grating layer, in contact with the gain waveguide, having a first grating disposed at a first end portion.

Gain-clamped semiconductor optical amplifier

A multi-wavelength light source includes a substrate, a fabry-perot laser laminated on the substrate that is operated by driving current below a predetermined threshold current to generate multi-wavelength light including a plurality of peaks whose wavelengths and spacing are identical to these of WDM channels. A semiconductor optical amplifier (SOA) is laminated on the substrate in an arrangement such that a slant surface of the SOA is opposed to a side surface of the fabry-perot laser, which serves to thereby amplify the multi-wavelength light output from the fabry-perot laser. The semiconductor optical amplifier is driven in a gain saturation state to reduce the relative intensity of noise in the channels of the multi-wavelength light that are simultaneously amplified.

Low noise multi-wavelength light source and wavelength division multiplexing system using same

Disclosed are optical signal transmission apparatus including a reflective gain-clamped semiconductor optical amplifier and optical communication system using the optical signal transmission apparatus, which can improve modulation speed and optical power by effectively suppressing intensity noise of an incoherent light source. The optical signal transmission apparatus comprises a light source; a reflective gain-clamped semiconductor optical amplifier to generate gain-clamped optical signals having a substantially constant output intensity in a gain saturation region; a wavelength division multiplexing apparatus configured to spectrum-slice light from the light source, provide the spectrum-sliced light to the reflective gain-clamped semiconductor optical amplifier, and multiplex optical signals gain-clamped by the reflective gain-clamped optical amplifier, and a circulator for inputting the light generated by the light source to the wavelength division multiplexing apparatus, and outputting the optical signal multiplexed by the wavelength division multiplexing apparatus to a transmission link.

Optical signal transmission apparatus including reflective gain-clamped semiconductor optical amplifier

A reflective semiconductor optical amplifier includes a substrate, a waveguide with a buried heterostructure formed by sequentially laminating a lower cladding, an active layer, and an upper cladding on the substrate, the waveguide including, sequentially, respective straight line, curved and tapered waveguide regions. A current blocking layer surrounds the waveguide to prevent electric current from flowing outside the active layer. Selectively etching portions of the current blocking layer and the substrate around the waveguide forms a trench to reduce parasitic capacitance. Further features include a window region on one end of the tapered waveguide region, an anti-reflection surface on one end of the window region, and a high-reflection surface on one end of the straight line waveguide region.

Reflective semiconductor optical amplifier

Growing community of inventors

Suwon-si, South Korea

Hyun-Cheol Shin