Korea Institute of Science and Technology

Hyun Cheol Koo

Hyung Jun Kim

Suk Hee Han

Joon Yeon Chang

Byoung Chul Min

Joo Hyeon Lee

Hyun Jung Yi

Ouk Jae Lee

Dong Soo Han

Jong Hwa Eom

Cha Un Jang

Ki Hyuk Han

A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.

Nano spintronic device using spin current of ferromagnetic material and heavy metal channel

Growing community of inventors

Seoul, South Korea

Hyun Cheol Koo