Samsung Electronics Co., Ltd.

Hyun-chang Kim

Gyo-young Jin

Yong-chul Oh

Se-myeong Jang

Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.

Integrated circuit devices having uniform silicide junctions

A gate having sidewalls is formed on an integrated circuit substrate. A barrier layer spacer is formed on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is formed on the portion of the barrier layer spacer protruding from the sidewalls of the gate. Related devices are also provided.

Growing community of inventors

Kyungki-do, South Korea

Hyun-chang Kim