Samsung Electronics Co., Ltd.

Hyun-Bae Lee

Jong-Won Hong

Kyung-In Choi

Sang-Woo Lee

Gil-heyun Choi

Jong-myeong Lee

Yong-Suk Moon

Jong-Myeong Lee

Hyun-Seok Oh

Gin-Kyu Choi

Hyun-seok Yu

Hye-Jeong Lee

Woo-Jin Lee

Jeong-Won Lee

Ji-soon Park

Sang-woong Shin

Seong-hwee Cheong

Young-Seok Lim

Seung-Gil Yang

Hyun-Seok Yu

A method of forming a dielectric layer, the method including sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process, wherein a first nitrogen plasma treatment is performed after forming the first oxide layer.

Method of forming a dielectric layer having an ONO structure using an in-situ process

A sense amplifier having a pre-amplifier and a main-amplifier is disclosed. The pre-amplifier is connected to paired data line, senses and amplifies data on the paired data line using voltage mode and outputting a pair of differential signal. The main-amplifier is connected to the paired data line, senses and amplifies data on the paired data line using current mode and generating a first amplified signal, senses and amplifies the first amplified signal using voltage mode in response to the pair of differential signal, and outputting an amplified data.

Sense amplifier and semiconductor memory device using it

A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.

Structures electrically connecting aluminum and copper interconnections and methods of forming the same

Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.

Methods of forming metal interconnection structures

A read data path circuit for use in the semiconductor memory device includes a bit line sense amplifier, a local input/output line sense amplifier, a column selection unit operationally coupling a bit line pair with the local input/output line pair in response to a column selection signal, where the bit line pair is coupled to the bit line sense amplifier and the local input/output line pair is coupled to the local input/output line sense amplifier, and a bit line disturbance preventing unit configured to equalize signal levels of the local input/output line pair before the column selection signal is activated, and configured to sense and amplify signal levels of bit line data transferred to the local input/output line pair after the column selection signal is activated.

Semiconductor memory device having bit line disturbance preventing unit

Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.

Methods of forming a semiconductor device including a diffusion barrier film

An example embodiment provides a method of forming a conductive pattern in a semiconductor device. The method includes forming one or more dielectric layers over a first conductive pattern formed on a substrate; forming an opening in the one or more dielectric layers to expose a portion of the first conductive pattern, forming a growth promoting layer over the exposed portion of the first conductive pattern and the one or more dielectric layers, forming a growth inhibiting layer over a portion of the growth promoting layer, and forming the second conductive layer in the opening.

Semiconductor device and methods of forming the same

A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.

Semiconductor memory device and method of fabricating the same

A semiconductor memory device includes a memory cell array including a plurality of memory cell array blocks, a plurality of pairs of first data lines for transceiving data with corresponding memory cell array blocks, a plurality of column selection signal lines disposed in an orthogonal direction to the pairs of first data lines, and a plurality of pairs of second data lines to transceive data with corresponding pairs of first data lines of the pairs of first data lines. The memory cell array includes a signal interference compensator that shifts a voltage level of a second data line signal of one of the pair of second data lines interfered by a column selection signal line, to a voltage level of a first data line signal of other of the pair of second data lines not interfered so as to compensate for a signal interference.

Semiconductor memory device and method of compensating for signal interference thereof

An apparatus and method for improving the performance of an error correction code against the effects of error waves in a Multi-Input Multi-Output (MIMO) communication system are provided. In a receiver of the MIMO communication system, a Minimum Mean Square Error (MMSE) receiver unit estimates transmitted signals from at least two paths using signals received at each of receive antennas, a signal deprocessor selects one of the estimated signals, stores the other estimated signal, assigns weighting values to the selected signal and a previous detected signal, combines the weighted signals, and detects transmitted data from the combined signal, a signal reproducer reproduces a transmitted signal from the detected transmitted data, and a subtractor updates the received signals by subtracting the reproduced transmitted signal from the received signals and provides them to the MMSE receiver unit.

Apparatus and method for cancelling interference in a mobile communication system using multiple antennas

An apparatus and method for receiving a signal in a MIMO communication system are provided. In the signal receiving method, a first received signal received at each of the receive antennas is equalized in a predetermined first method. Each of the equalized transmit antenna signals is despread with a plurality of spreading codes used in a transmitter. The strongest transmit antenna signal is detected among the despread transmit antenna signals, and decoded in a predetermined second method, for error verification. The verified strongest transmit antenna signal is reproduced as an interference signal. A second received signal is generated by subtracting the interference signal from the first received signal and equalized in the first method. The above operation is repeated on the equalized transmit antenna signals except the strongest transmit antenna signal.

Growing community of inventors

Suwon-si, South Korea

Hyun-Bae Lee