Samsung Electronics Co., Ltd.

Dongbu Electronics, Co. Ltd.

Hyun Bae Lee

Wan Don Kim

Min Joo Lee

Jang Eun Lee

Jung Hwan Choi

Hyeon Jin Shin

Eui Bok Lee

Yoon Tae Hwang

Hyun Seok Lim

Jeong Hyuk Yim

Geun Woo Kim

Hyo Seok Choi

Jeong Hun Kim

A FINFET includes a substrate having a semiconductor fin extending upward from a first surface thereof, and first and second power rails on first and second opposing sides of the semiconductor fin, respectively. A base of the semiconductor fin may be recessed within a trench within the surface of the substrate, and the first and second power rails may at least partially fill the trench. A through-substrate via may be provided, which extends from adjacent a second surface of the substrate to at least one of the first and second power rails. A source/drain contact is also provided, which is electrically connected to a source/drain region of the FINFET and at least one of the first and second power rails.

Semiconductor devices having highly integrated active and power distribution regions therein

A semiconductor device and a method for fabricating the same. The semiconductor device comprising: a first level wiring disposed at a first metal level, and includes a first line wiring, a first insulating capping film and a first side wall graphene film, the first insulating capping film extending along an upper surface of the first line wiring, and the first side wall graphene film extending along a side wall of the first line wiring; an interlayer insulating film covering the side wall of the first line wiring and a side wall of the first insulating capping film; and a second level wiring disposed at a second metal level higher than the first metal level, and includes a second via connected to the first line wiring, and a second line wiring connected to the second via, wherein the second via penetrates the first insulating capping film.

Semiconductor device having a graphene film and method for fabricating thereof

A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

Semiconductor device

Disclosed is a method for inspecting defects of a wafer of a semiconductor device, wherein the wafer is set up with reference coordinates for a respective die so that inspection time is reduced and the defects are classified by the respective die. The method may be carried out by a defect analysis system comprising an inspection station for inspecting defects of the wafer and a review station for precisely re-inspecting defects. The method includes the steps of: providing the respective die with a serial number, the plural dies being formed on the wafer; and setting up coordinates for a plane of the respective die based on one edge of the die as reference point.

Method for inspecting wafer defects of a semiconductor device

Growing community of inventors

Seoul, South Korea

Hyun Bae Lee