Samsung Electronics Co., Ltd.

Hyuk Soon Choi

Kyungho Lee

Hyuk An

Kwang Hee Kim

Seon Mi Yoon

Hyo Sug Lee

Kyung Ho Lee

Jae Young Choi

Young Jin Kim

Tae Chan Kim

JungChak Ahn

Jung Chak Ahn

Kwang Hyun Lee

Dong Ki Min

Jung Bin Yun

Yo Hwan Noh

Wang Hyun Kim

Dae Kwan Kim

Se Hwan Yun

Young Chan Kim

Yun Ki Lee

Young Woo Jung

Sang-Su Park

Min-Jun Choi

Jun Suk Lee

Seounghyun Kim

Hee Sung Shim

Dae Kwn Ahn

An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

Image sensors with light channeling reflective layers therein

An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

Image sensors

An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.

Image sensor including a pixel having photoelectric conversion elements and image processing device having the image sensor

A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.

Unit pixels, image sensors including the same, and image processing systems including the same

An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions.

Image sensors using different photoconversion region isolation structures for different types of pixel regions

An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another.

Image pixel including a plurality of trenches, image sensor including the same, and image processing system including the same

Disclosed herein are an aromatic imide-based dispersant for CNTs and a carbon nanotube composition comprising the same. Having an aromatic ring structure advantageously realizing adsorption on carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large quantity of carbon nanotubes.

Aromatic imide-based dispersant for carbon nanotubes and carbon nanotube composition comprising the same

Disclosed herein is a cyclic dispersant having a rigid block which has a high affinity for carbon nanotubes, and a flexible block which has a high affinity for a solvent, with a linkage created therebetween. Having a structure that is advantageous with respect to adsorption to carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large amount of carbon nanotubes.

Dispersant for dispersing carbon nanotubes and carbon nanotube composition comprising the same

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Hwaseong-si, South Korea

Hyuk Soon Choi