Samsung Electronics Co., Ltd.

Hyuk-soon Choi

Jai-kwang Shin

Jong-seob Kim

Ki-ha Hong

Hyo-sug Lee

Young-Gu Jin

Jae-joon Oh

Yoon-Ho Kang

Ji-hyun Hur

Kwang-Hee Kim

Yoon-Dong Park

I-hun Song

Seung-hoon Lee

Suk-Pil Kim

Won-Joo Kim

June-mo Koo

Jung-woo Kim

Deok-kee Kim

Chang-hoon Jung

Myoung-hoon Jung

Kyoung-won Park

Byong-ho Cheong

Provided is an image sensor having a hybrid pixel structure in which pixels that sense visible light and pixels that sense ultraviolet light or infrared light are arranged together. For example, the image sensor includes a plurality of first pixels and a plurality of second pixels that are different in size. A width of each of the plurality of second pixels in a horizontal direction is a first integer multiple of a width of each of the plurality of first pixels in the horizontal direction, and a width of each of the plurality of second pixels in a vertical direction is a second integer multiple of a width of each of the plurality of first pixels in the vertical direction. The image sensor enables the pixels sensing ultraviolet light or infrared light, which have different sizes from the pixels sensing visible light, to be efficiently arranged together with the pixels sensing visible light, on the same substrate.

Image sensor including hybrid pixel structure

Example embodiments relate to a method of forming a core-shell structure. According to a method, a region in which the core-shell structure will be formed is defined on a substrate, and a core and a shell layer may be sequentially stacked in the defined region. A first shell layer may further be formed between the substrate and the core. When the core and the shell layer are sequentially stacked in the core-shell region, the method may further include forming a groove on the substrate, forming the first shell layer covering surfaces of the groove, forming the core in the groove of which surfaces are covered by the first shell layer, and forming a second shell layer covering the core.

Method of forming core-shell type structure and method of manufacturing transistor using the same

Provided is a chemical sensor that may include a first electrode on a substrate, a sensing member covering the first electrode on the substrate, and a plurality of second electrodes on a surface of the sensing member exposing the surface of the sensing member. The chemical sensor may be configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member. Provided also is a chemical sensor array including an array of chemical sensors.

Chemical sensor using thin-film sensing member

A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

Phase change memory devices having a current increase unit

A method of forming a nano-particle array by convective assembly and a convective assembly apparatus for the same are provided. The method of forming nano-particle array comprises: coating a plurality of nano-particles by forming a coating layer; performing a first convective assembly by moving a first substrate facing, in parallel to and spaced apart from a second substrate at a desired distance such that a colloidal solution including the coated nano-particles is between the first and second substrate; and performing a second convective assembly for evaporating a solvent by locally heating a surface of the colloidal solution drawn when the first substrate is moved in parallel relative to the second substrate. The present invention provides the method of forming the nano-particle array where nano-particles having a particle size from a few to several tens of nanometers are uniformly arrayed on a large area substrate at a low cost, and the convective assembly apparatus for the same.

Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the same

Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.

Antifuse structures, antifuse array structures, methods of manufacturing the same

Phase change memory devices

A micro lens array and method of fabricating the micro lens array. The micro lens array includes: a substrate; a plurality of holes penetrating the substrate; and a plurality of lens units on a first surface of the substrate, each lens being at a respective one of the plurality of holes. When the micro lens array is applied to a display device, a high contrast ratio can be obtained, and the light can be transmitted in a single direction.

Micro lens array and method of manufacturing the same

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Seongnam-si, South Korea

Hyuk-soon Choi