Lam Research Corporation

Hyuk-Jun Kwon

Yunsang Kim

Dong Woo Paeng

He Zhang

A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.

Plasma assisted doping on germanium

A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

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Daegu, South Korea

Hyuk-Jun Kwon