Samsung Electronics Co., Ltd.

Hyuk-Jin Kwon

Jun Hyuk Seo

Tae-hyuk Ahn

Jong-chul Park

Jong-Heui Song

Dae-Keun Kang

Jong-Chul Park

A method according to some embodiments of the invention includes defining an active region by forming a trench device isolation region on an integrated substrate, forming a mask pattern that exposes a channel sub-region of the active region and the trench device isolation region adjacent to the channel sub-region, etching the trench device isolation region, which is exposed by the mask pattern, to be recessed to a first depth using the mask pattern as an etch mask, etching the channel sub-region to form a gate trench having a second depth that is deeper than the first depth using the mask pattern as an etch mask, and forming a recess gate that fills the gate trench.

Method of manufacturing integrated circuit device including recessed channel transistor

An apparatus and method for controlling exhaust produced by a reactive chamber is provided. The apparatus for controlling exhaust may include, for example, a valve body having an exhaust hole for the exhaust to pass through, and may include a first and second valve which regulate the opening and/or the closing of the exhaust hole. A control device may control the operation of the first and second valves based on the internal pressure of the reactive chamber.

Apparatus and method for controlling exhaust pressure in semiconductor manufacturing

Growing community of inventors

Gyeonggi-do, South Korea

Hyuk-Jin Kwon